Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRFS4010-7PPbF | 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-pin package |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 3.3 | 190 | 380 |
D2-PAK-7 |
| IRF1404ZS | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 3.7 | 190 | 220 |
D2-PAK |
| IRF1404ZL | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 3.7 | 190 | 220 |
TO-262 |
| IRF1404Z | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 3.7 | 190 | 220 |
TO-220AB |
| IRFSL4115PbF | 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 10.3 | 195 | 375 |
TO-262 |
| IRFS4115PbF | 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 10.3 | 195 | 375 |
D2-PAK |
| IRFSL3107PbF | 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 75 | - | - | - | - | 2.5 | 195 | 370 |
TO-262 |
| IRFS3107PbF | 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 75 | - | - | - | - | 2.5 | 195 | 370 |
D2-PAK |
| IRFSL3006PbF | 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 60 | - | - | - | - | 2 | 195 | 375 |
TO-262 |
| IRFS3006PbF | 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 60 | - | - | - | - | 2 | 195 | 375 |
D2-PAK |
| IRFP4468PbF | 100V Single N-Channel HEXFET Power MOSFET in a TO-247AC |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | 2 | 2.6 | 195 | 520 |
TO-247AC |
| IRFB3006PbF | 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 60 | - | - | - | - | 2.1 | 195 | 375 |
TO-220AB |
| IRFP4368PbF | HEXFET Power MOSFET |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 75 | - | - | - | 1.46 | 1.85 | 195 | 520 |
TO-247AC |
| IRFP4004PbF | HEXFET Power MOSFET |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | 1.35 | 1.7 | 195 | 380 |
TO-247AC |
| FDMS86350ET80 | N-канальный MOSFET транзистор, выполненный по технологии PowerTrench®, 80 В, 190 А |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 80 | - | - | - | - | 2.4 | 198 | 187 |
Power 56 |
| IXTV200N10TS | N-канальный силовой TrenchMV MOSFET транзистор |
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IXYS |
MOSFET |
N | 1 | 100 | 5.5 | 5.5 | 5.5 | 5.5 | 5.5 | 200 | 550 |
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| IXTP200N055T2 | N-канальный силовой TrenchT2 MOSFET транзистор |
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IXYS |
MOSFET |
N | 1 | 55 | 4.2 | 4.2 | 4.2 | 4.2 | 4.2 | 200 | 360 |
TO-220 |
| STV200N55F3 | N-channel 55 V - 1.8 m? - 200 A - PowerSO-10 STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 55 | - | - | - | - | 1.8 | 200 | 300 |
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| IXTV200N10T | N-канальный силовой TrenchMV MOSFET транзистор |
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IXYS |
MOSFET |
N | 1 | 100 | 5.5 | 5.5 | 5.5 | 5.5 | 5.5 | 200 | 550 |
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| IXTA200N055T2 | N-канальный силовой TrenchT2 MOSFET транзистор |
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IXYS |
MOSFET |
N | 1 | 55 | 4.2 | 4.2 | 4.2 | 4.2 | 4.2 | 200 | 360 |
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