Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IPB45P03P4L-11 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
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Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 12.8 | 8.7 | -45 | 58 |
TO-263-3 |
| ZXMD63P03X | DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
P | 2 | -30 | - | - | - | 270 | 185 | -2 | 0.87 |
MSOP-8 |
| IPP80P03P4-05 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
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Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | - | 4.1 | -80 | 137 |
TO-220 |
| NTTS2P03R2 | Power MOSFET ?2.48 Amps, ?30 Volts P?Channel Enhancement Mode Single Micro8 Package |
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ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | 100 | 63 | - | -2.48 | 0.78 |
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| TSM9435CS | P-канальный MOSFET транзистор, -30 В, -5.3 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 90 | 60 | -5.3 | 2.5 |
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| NTS4173P | Power MOSFET ?30 V, ?1.3 A, Single P?Channel, SC?70 |
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ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 110 | 90 | -1.2 | 0.29 |
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| IPI80P03P4-05 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
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Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | - | 4.1 | -80 | 137 |
TO-262 |
| NTR4171P | Power MOSFET ?30 V, ?3.5 A, Single P?Channel, SOT?23 |
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ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 60 | 50 | -2.2 | 0.48 |
SOT-23-3 |
| ZXM66P03N8 | 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
P | 1 | -30 | - | - | - | 35 | 25 | -7.9 | 1.56 |
SOIC-8 |
| IPB80P03P4-05 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
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Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | - | 3.8 | -80 | 137 |
TO-263-3 |
| IPD90P03P4-04 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
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Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | - | 3.6 | -90 | 137 |
TO-252 |
| IPD50P03P4L-11 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
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Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 13 | 8.3 | -50 | 58 |
TO-252 |
| TSM4459CS | P-канальный MOSFET транзистор, -30 В, -17 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 9.5 | 5.2 | -17 | 2.5 |
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| ZXM64P03X | 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
P | 1 | -30 | - | - | - | 100 | 75 | -3.8 | 1.8 |
MSOP-8 |
| IPD80P03P4L-07 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
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Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 8.7 | 5.6 | -80 | 88 |
TO-252 |
| TSM4435CS | P-канальный MOSFET транзистор, -30 В, -9.1 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 35 | 21 | -9.1 | 2.5 |
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| IPD90P03P4L-04 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
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Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 5.1 | 3.3 | -90 | 137 |
TO-252 |
| TSM4435BCS | P-канальный MOSFET транзистор, -30 В, -9.1 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 35 | 21 | -9.1 | 2.5 |
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| FDMS6681Z | P-канальный MOSFET транзистор PowerTrench® -30 В, -49 А, 3.2 мОм |
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Fairchild Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 5 | 3.2 | 49 | 73 |
Power 56 |
| ZXM61P03F | 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
P | 1 | -30 | - | - | - | 550 | 350 | -1.1 | 0.8 |
SOT-23-3 |
