Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRF7902PBF | HEXFET Power MOSFETs Dual N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 2 | 30 | - | - | - | 29.7 | 22.6 | 9.7 | 2 |
SOIC-8 |
| IXTL2x240N055T | N-канальный силовой TrenchMV MOSFET транзистор |
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IXYS |
MOSFET |
N | 2 | 55 | 4.4 | 4.4 | 4.4 | 4.4 | 4.4 | 140 | 150 |
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| FDW2501NZ | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 1400 | - | 5.5 | 1 |
TSSOP-8 |
| NTLJD4116N | Power MOSFET 30 V, 4.6 A, Cool Dual N?Channel, 2x2 mm WDFN Package |
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ON Semiconductor |
MOSFET |
N | 2 | 30 | 88 | - | - | 47 | - | 3.7 | 1.5 |
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| ZXMN3F318DN8 | 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET |
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Zetex |
MOSFET |
N | 2 | 30 | - | - | - | - | 24 | 7.3 | 2.1 |
SOIC-8 |
| STS8DNF3LL | Dual N-channel 30V - 0.017? - 8A SO-8 Low gate charge STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 2 | 30 | - | - | - | 20 | 17 | 8 | 2 |
SOIC-8 |
| IRF7750GPBF | HEXFET Power MOSFETs Dual P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 55 | 30 | - | 4.7 | 1 |
TSSOP-8 |
| Si8900EDB | Bidirectional N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | 32 | - | 26 | 20 | - | 5.4 | 1 |
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| TSM9426DCS | Сдвоенный N-канальный MOSFET транзистор, 20 В, 9.4 А, ESD защита |
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Taiwan Semiconductor |
MOSFET |
N | 2 | 20 | 30 | 22 | - | 16 | 14 | 9.4 | 2 |
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| Si4910DY | Dual N-Channel 40-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 40 | - | - | - | 26 | 22 | 7.6 | 3.1 |
SOIC-8 |
| STS3DPF20V | DUAL P-CHANNEL 20V - 0.090 W - 3A SO-8 STripFET™ POWER MOSFET |
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STMicroelectronics |
MOSFET |
P | 2 | 20 | - | - | 100 | 90 | - | 3 | 1.6 |
SOIC-8 |
| Si7956DP | Dual N-Channel 150-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 150 | - | - | - | - | 88 | 2.6 | 1.4 |
PowerPAK_SO-8 |
| Si1024X | Dual N-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | 1250 | - | 850 | 700 | - | 0.5 | 0.25 |
SC89-6 |
| NTZD3154N | Small Signal MOSFET 20 V, 540 mA, Dual N?Channel |
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ON Semiconductor |
MOSFET |
N | 2 | 20 | 700 | - | - | 400 | - | 0.54 | 0.25 |
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| BSS84DW | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 2 | -50 | - | - | - | - | - | -0.13 | 0.3 |
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| SiA911DJ | Dual P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 153 | - | 109 | 78 | - | 4.5 | 6.5 |
PowerPAK SC70-6 |
| Si6913DQ | Dual P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 12 | 29 | - | 21 | 16 | - | 4.9 | 0.83 |
TSSOP-8 |
| TSM4925DCS | Сдвоенный P-канальный MOSFET транзистор, -30 В, -7.1 А |
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Taiwan Semiconductor |
MOSFET |
P | 2 | -30 | - | - | - | 41 | 25 | -7.1 | 2 |
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| Si7842DP | Dual N-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 24 | 18 | 6.3 | 1.4 |
PowerPAK_SO-8 |
| Si1026X | N-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 60 | - | - | - | 3000 | 1400 | 0.305 | 0.25 |
SC89-6 |
