Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| STB6NK90Z | N-channel 900V - 1.56? - 5.8A - D2PAK Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 900 | - | - | - | - | 1560 | 5.8 | 140 |
D2-PAK |
| IRF634SPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 250 | - | - | - | - | 450 | 8.1 | 74 |
D2-PAK |
| STI270N4F3 | N-channel 40 V - 2.1 m? - 160 A I2PAK STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 40 | - | - | - | - | 2.5 | 120 | 330 |
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| STP13NK50Z | N-channel 500V - 0.40? - 11A TO-220 Zener-protected SuperMESHTM Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 400 | 11 | 140 |
TO-220 |
| FDB14AN06LA0 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 10.2 | 67 | 125 |
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| STF8NM60N | N-channel 600 V - 0.56 ? - 7 A - TO-220FP second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 560 | 7 | 25 |
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| FDT3612 | 100V N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 88 | 3.7 | 3 |
SOT-223-4 |
| IRF1312L | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 80 | - | - | - | - | 10 | 95 | 210 |
TO-262 |
| PHP20N06T | N-channel TrenchMOS (tm) transistor |
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NXP |
MOSFET |
N | 1 | 55 | - | - | - | - | 64 | 20.3 | 62 |
TO-220AB |
| BSC077N12NS3 | Силовой MOSFET-транзистор серии OptiMOS™3, 120 В, 98 А, 7.7 мОм |
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Infineon Technologies |
MOSFET |
N | 1 | 120 | - | - | - | - | 7.7 | 98 | 139 |
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| STF10NK50Z | N-CHANNEL 500V - 0.55? - 9A TO-220 Zener-Protected SuperMESH™MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 550 | 9 | 125 |
TO-220 |
| FQA9N90C_F109 | 900V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 1120 | 9 | 280 |
TO-3PN |
| IPB015N04NG | Силовой MOSFET транзистор семейства OptiMOS 3 |
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Infineon Technologies |
MOSFET |
N | 1 | 40 | - | - | - | - | 1.5 | 120 | 250 |
TO-263-3 |
| STB5NK50Z | N-CHANNEL 500V - 1.22? - 4.4A D2/I2PAK Zener-Protected SuperMESH™MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 122 | 4.4 | 70 |
D2-PAK |
| FDM3622 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 44 | 4.4 | 2.1 |
Power 33 |
| IRFPS35N50L | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 125 | 34 | 450 |
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| STF16NF25 | N-channel 250V - 0.195? - 13A - TO-220FP low gate charge STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 250 | - | - | - | - | 195 | 13 | 25 |
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| NTP5412N | Power MOSFET 60 Amps, 60 Volts N-Channel TO-220 |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 11.1 | 60 | 125 |
TO-220AB |
| FDA28N50F | N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 140 | 28 | 310 |
TO-3PN |
| IRFBC30AL | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 2200 | 3.6 | 74 |
TO-262 |
