Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| DMN2004WK | N-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
N | 1 | 20 | 700 | - | - | 400 | - | 0.54 | 0.2 |
SOT-323 |
| Si5905BDC | Dual P-Channel 8-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 8 | 140 | - | 97 | 66 | - | 4 | 3.1 |
ChipFET_1206-8 |
| IRF7811W | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 12 | - | 14 | 3.1 |
SOIC-8 |
| Si4465ADY | P-Channel 1.8-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 8 | 13 | - | 9.2 | 7.5 | - | 13.7 | 3 |
SOIC-8 |
| TN0702 | N-Channel Enhancement-Mode Vertical DMOS FET |
|
Supertex, Inc. |
MOSFET |
N | 1 | 20 | 4000 | - | - | - | - | 1 | 1 |
TO-92 |
| ZVNL120G | SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET |
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Zetex |
MOSFET |
N | 1 | 200 | - | - | - | - | - | 0.32 | 2 |
SOT-223-4 |
| NTB30N06L | Power MOSFET 30 Amps, 60 Volts, Logic Level, N?Channel D2PAK |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | - | 30 | 88.2 |
D2-PAK |
| Si5943DU | Dual P-Channel 12-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 12 | 98 | - | 73 | 53 | - | 6 | 8.3 |
PowerPAK_ChipFET |
| NTGS3433T1 | MOSFET ?3.3 Amps, ?12 Volts P?Channel TSOP?6 |
|
ON Semiconductor |
MOSFET |
P | 1 | -12 | - | - | - | 55 | - | -3.3 | 2 |
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| FDJ1028N | N-Channel 2.5 Vgs Specified PowerTrench MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 70 | - | 3.2 | 1.5 |
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| Si3879DV | P-Channel 20-V (D-S) MOSFET with Schottky Diode |
|
Vishay |
MOSFET |
P | 1 | 20 | - | - | 85 | 58 | - | 5 | 3.3 |
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| DMP2160UFDB | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Diodes Incorporated |
MOSFET |
P | 2 | -20 | 86 | - | - | 54 | - | -3.8 | 1.4 |
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| NTD20N03L27 | Power MOSFET 20 Amps, 30 Volts, N-Channel DPAK |
|
ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | - | - | 20 | 74 |
D-PAK |
| Si1905BDH | Dual P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 8 | 950 | - | 655 | 450 | - | 0.63 | 0.357 |
SC70-6 |
| NTJS4151P | Trench Power MOSFET ?20 V, ?4.2 A, Single P?Channel, SC?88 |
|
ON Semiconductor |
MOSFET |
P | 1 | -20 | 180 | - | - | 47 | - | -3.3 | 1 |
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| FDT439N | N-Channel 2.5V Specified Enhancement MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | 58 | - | 45 | - | 6.3 | 3 |
SOT-223-4 |
| IRF7756GPBF | HEXFET Power MOSFETs Dual P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 2 | 12 | - | - | 58 | 40 | - | 4.3 | 1 |
TSSOP-8 |
| ZXM66P02N8 | 20V P-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
P | 1 | -20 | - | - | - | 25 | - | -8 | 1.56 |
SOIC-8 |
| DMN2004VK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 2 | 20 | 700 | - | - | 400 | - | 0.54 | 0.25 |
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| Si5915BDC | Dual P-Channel 8-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 8 | 120 | - | 86 | 58 | - | 4 | 3.1 |
ChipFET_1206-8 |
