Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
DMP2012SN | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 230 | - | -0.7 | 0.5 |
|
|
Si1031R | P-Channel 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 15000 | - | 12000 | 8000 | - | 0.155 | 0.3 |
SC75A |
|
IRF7555 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 105 | 55 | - | 4.3 | 1.25 |
|
|
ZXMP6A13G | 60V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 1 | -60 | - | - | - | 595 | 390 | -2.3 | 2 |
SOT-223-4 |
|
Si6943BDQ | Dual P-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
P | 2 | 12 | - | - | 8 | 6 | - | 2.3 | 0.8 |
TSSOP-8 |
|
IXTH90P10P | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -100 | 25 | 25 | 25 | 25 | 25 | -90 | 462 |
|
|
Si1021R | P-Channel 60-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 60 | - | - | - | 8000 | 4000 | 0.19 | 0.25 |
SC75A |
|
Si6463BDQ | P-Channel 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 20 | - | 15 | 11 | - | 6.2 | 1.05 |
TSSOP-8 |
|
IXTT90P10P | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -100 | 25 | 25 | 25 | 25 | 25 | -90 | 462 |
|
|
Si1025X | P-Channel 60-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | 60 | - | - | - | 8000 | 4000 | 0.19 | 0.25 |
SC89-6 |
|
IRF7220 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 14 | - | - | - | 12 | - | 11 | 2.5 |
SOIC-8 |
|
IRF9640S | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 500 | 11 | 125 |
D2-PAK |
|
Si5943DU | Dual P-Channel 12-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | 12 | 98 | - | 73 | 53 | - | 6 | 8.3 |
PowerPAK_ChipFET |
|
IRFR9120 | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 600 | 5.6 | 42 |
D-PAK |
|
DMP3056LSD | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 2 | -30 | - | - | - | 65 | 45 | -6.9 | 2.5 |
|
|
Si4465ADY | P-Channel 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 8 | 13 | - | 9.2 | 7.5 | - | 13.7 | 3 |
SOIC-8 |
|
IXTH8P50 | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -500 | 1200 | 1200 | 1200 | 1200 | 1200 | -8 | 180 |
|
|
IXTR68P20T | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -200 | 64 | 64 | 64 | 64 | 64 | -44 | 270 |
|
|
STT3PF20V | P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET™ II POWER MOSFET | STMicroelectronics |
MOSFET |
P | 1 | 20 | - | - | 200 | 140 | - | 2.2 | 1.6 |
|
|
SUD50P04-23 | P-Channel 40-V (D-S) 175°C MOSFET | Vishay |
MOSFET |
P | 1 | 40 | - | - | - | 24 | 19 | 20 | 45.4 |
D-PAK |