Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| FDC6321C | Dual N & P Channel, Digital FET |
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Fairchild Semiconductor |
N+P |
N, P | 2 | 25 | - | - | 440 | 330 | - | 1 | 0.9 |
SSOT-6 |
| IRF5852 | HEXFET Power MOSFETs Dual N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 2 | 20 | - | - | 120 | 90 | - | 2.7 | 0.96 |
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| ZXM64P02X | 20V P-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
P | 1 | -20 | - | - | - | 90 | - | -3.5 | 1.8 |
MSOP-8 |
| DMN2004TK | N-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
N | 1 | 20 | 700 | - | - | 400 | - | 0.54 | 0.15 |
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| Si5933DC | Dual P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 205 | - | 137 | 95 | - | 2.7 | 1.1 |
ChipFET_1206-8 |
| TSM2310CX | N-канальный MOSFET транзистор, 20 В, 4 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 20 | 100 | 40 | - | 30 | - | 4 | 1.25 |
SOT-23-3 |
| Si7236DP | Dual N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | - | - | 5.6 | 42 | - | 60 | 46 |
PowerPAK_SO-8 |
| IRF7809AV | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 9 | - | 13.3 | 2.5 |
SOIC-8 |
| Si9433BDY | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 50 | 30 | - | 4.5 | 1.3 |
SOIC-8 |
| TSM2611EDCX6 | Сдвоенный N-канальный MOSFET транзистор, 20 В, 6 А, ESD защита |
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Taiwan Semiconductor |
MOSFET |
N | 2 | 20 | - | 28 | - | 20 | - | 6 | 0.83 |
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| BSH203 | P-channel enhancement mode MOS transistor |
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NXP |
MOSFET |
P | 1 | 30 | 1100 | - | 920 | 660 | - | 0.47 | 0.417 |
SOT-23-3 |
| FDME910PZT | P-канальные MOSFET-транзисторы PowerTrench® -20В, -8А |
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Fairchild Semiconductor |
MOSFET |
P | 1 | -20 | 45 | 31 | - | 24 | - | -8 | 2.1 |
MicroFET |
| NTS2101P | Power MOSFET ?8.0 V, ?1.4 A, Single P?Channel, SC?70 |
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ON Semiconductor |
MOSFET |
P | 1 | -8 | 117 | - | - | 65 | - | -1.4 | 0.29 |
SOT-23-3 |
| FQPF5N60C | 600V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | 2000 | - | 4.5 | 33 |
TO-220F |
| DMN32D2LDF | COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 2 | 30 | 2200 | - | - | - | - | 0.4 | 0.28 |
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| Si7405BDN | P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | 16 | - | 12 | 9 | - | 16 | 33 |
PowerPAK_1212-8 |
| FDS6898AZ | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 10 | - | 9.4 | 2 |
SOIC-8 |
| Si3447CDV | P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | 55 | - | 41 | 3 | - | 7.8 | 3 |
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| DMP2130L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | 87 | 51 | - | -3 | 1.4 |
SOT-23-3 |
| Si3812DV | N-Channel 20-V (D-S) MOSFET with Schottky Diode |
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Vishay |
MOSFET |
N | 1 | 20 | - | - | 160 | 100 | - | 2 | 0.83 |
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