Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
| STP120NF10 | N-channel 100V - 0.009? - 110A - TO-220 STripFET™ Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 9 | 110 | 312 |
TO-220 |
| ZVN4210G | SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
|
Zetex |
MOSFET |
N | 1 | 100 | - | - | - | - | 1500 | 0.8 | 2 |
SOT-223-4 |
| STP9NK70Z | N-CHANNEL 700V - 1W - 7.5A TO-220 Zener-Protected SuperMESH™Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 700 | - | - | - | - | 1000 | 7.5 | 115 |
TO-220 |
| IRF840APBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 850 | 8 | 125 |
TO-220AB |
| IRFIZ46N | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | - | 20 | 33 | 40 |
TO-220 |
| STU100N3LF3 | N-channel 30V - 0.0045? - 80A - IPAK Planar STripFET™ II Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | - | 4.5 | 80 | 110 |
|
| FDA75N28 | 280V N-Channel MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 280 | - | - | - | - | 35 | 75 | 520 |
TO-3PN |
| STB24NM65N | N-channel 650 V - 0.16 ? - 19 A - D2PAK second generation MDmesh™ Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 160 | 19 | 160 |
D2-PAK |
| SiB415DK | P-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 130 | 72 | 9 | 13 |
|
| IRF3415 | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 42 | 43 | 200 |
TO-220AB |
| PHD9NQ20T | N-канальный TrenchMOS™ транзистор |
|
NXP |
MOSFET |
N | 1 | 200 | - | - | - | - | 300 | 8.7 | 88 |
D-PAK |
| FCD2250N80Z | N-канальный MOSFET-транзистор семейства SuperFET® II, 800 В, 2.6 А |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 800 | - | - | - | - | 0.00225 | 2.6 | 39 |
D-PAK |
| FDPF52N20T | N-Channel MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 41 | 52 | 38.5 |
TO-220F |
| STB19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - D2PAK second generation MDmesh™ Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 150 |
D2-PAK |
| SUD35N10-26P | N-Channel 100-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 100 | - | - | - | - | 21 | 35 | 83 |
D-PAK |
| HUF75639G3 | N-Channel UltraFET Power MOSFETs |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 21 | 56 | 200 |
|
| IPD50R280CE | 500В силовой транзистор серии CoolMOS™ CE |
|
Infineon Technologies |
MOSFET |
N | 1 | 500 | - | - | - | - | 280 | 42.9 | 92 |
TO-252 |
| IRF7314 | HEXFET Power MOSFETs Dual P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 98 | 58 | - | 5.3 | 2 |
SOIC-8 |
| STD3NK60Z | N-CHANNEL 600V - 3.3W - 2.4A DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 3300 | 2.4 | 45 |
D-PAK |
| IPD60R600C6 | 600V CoolMOS™ C6 Power Transistor |
|
Infineon Technologies |
MOSFET |
N | 1 | 600 | - | - | - | - | 540 | 7.3 | 63 |
TO-252 |
