Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
TSM2314CX | N-канальный MOSFET транзистор, 20 В, 4.9 А | Taiwan Semiconductor |
MOSFET |
N | 1 | 20 | 100 | 40 | - | 33 | - | 4.9 | 1.25 |
SOT-23-3 |
|
Si7858ADP | N-Channel 12-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 12 | - | - | 2.9 | 2 | - | 20 | 1.9 |
PowerPAK_SO-8 |
|
IRF7811AV | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 14 | - | 14 | 3.5 |
SOIC-8 |
|
Si4803DY | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 8 | - | - | 85 | 52 | - | 5 | 3 |
SOIC-8 |
|
BSH207 | P-channel enhancement mode MOS transistor | NXP |
MOSFET |
P | 1 | 12 | 140 | - | 117 | 80 | - | 1.52 | 0.417 |
|
|
ZVNL120A | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex |
MOSFET |
N | 1 | 200 | - | - | - | - | - | 0.18 | 0.7 |
TO-92 |
|
NTS4101P | Power MOSFET ?20 V, ?1.37 A, Single P?Channel, SC?70 | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 83 | - | -1.37 | 0.329 |
|
|
NTP30N06L | Power MOSFET 30 Amps, 60 Volts, Logic Level, N?Channel TO?220 | ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | - | 30 | 88.2 |
TO-220 |
|
DMN3300U | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 30 | 185 | - | - | 100 | - | 2 | 0.6 |
SOT-23-3 |
|
Si5947DU | Dual P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | - | - | 81 | 48 | - | 6 | 10.4 |
PowerPAK_ChipFET |
|
NTGS3136P | Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6 | ON Semiconductor |
MOSFET |
P | 1 | -20 | 41 | - | - | 25 | - | -5.1 | 1.25 |
|
|
Si3499DV | P-Channel 1.5-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 8 | 28 | - | 24 | 19 | - | 5.3 | 1.1 |
|
|
PHT6N06LT | TrenchMOS (tm) transistor Logic level FET | NXP |
MOSFET |
N | 1 | 55 | - | - | - | 120 | - | 5.5 | 8.3 |
SOT-223-4 |
|
DMP2160U | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -20 | 92 | - | - | 60 | - | -3.2 | 1.4 |
SOT-23-3 |
|
Si1917EDH | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | 12 | 660 | - | 470 | 300 | - | 1 | 0.57 |
SC70-6 |
|
CSD16321Q5C | N-канальный силовой MOSFET DualCool™ NexFET™ | Texas Instruments |
MOSFET |
N | 1 | 25 | - | - | - | 2.1 | - | 100 | 3.1 |
|
|
NTJS3157N | Trench Power MOSFET 20 V, 4.0 A, Single N?Channel, SC?88 | ON Semiconductor |
MOSFET |
N | 1 | 20 | 70 | - | - | 45 | - | 3.2 | 1 |
|
|
DMN2004DWK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 20 | 700 | - | - | 400 | - | 0.54 | 0.2 |
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BTF3050TE | Транзисторные ключи нижнего плеча семейства HITFET™ с функцией защиты | Infineon Technologies |
MOSFET |
N | 1 | 5 | - | - | - | 100 | - | 3 | - |
|
|
Si5903DC | Dual P-Channel 2.5-V (G-S) Rated MOSFET | Vishay |
MOSFET |
P | 2 | 20 | - | - | 215 | 130 | - | 2.1 | 1.1 |
ChipFET_1206-8 |