Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRF7807A | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 25 | - | 6.6 | 2.5 |
SOIC-8 |
| NTR4501N | Power MOSFET 20 V, 3.2 A, Single N?Channel, SOT?23 |
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ON Semiconductor |
MOSFET |
N | 1 | 20 | - | - | - | 70 | - | 3.2 | 1.25 |
SOT-23-3 |
| IRF5850 | HEXFET Power MOSFETs Dual P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 220 | 135 | - | 2.2 | 0.96 |
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| FDC6401N | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 50 | - | 3 | 0.96 |
SSOT-6 |
| DMN3150L | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 1 | 28 | - | - | - | 60 | - | 3.2 | 1.25 |
SOT-23-3 |
| Si7411DN | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 27 | - | 20 | 15 | - | 7.5 | 1.5 |
PowerPAK_1212-8 |
| TSM3462CX6 | N-канальный MOSFET транзистор, 20 В, 5 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 20 | 51 | 40 | - | 33 | - | 5 | 1.25 |
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| NTGD1100L | Power MOSFET 8 V, ±3.3 A, Load Switch with Level?Shift, P?Channel, TSOP?6 |
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ON Semiconductor |
MOSFET |
P | 2 | 8 | 80 | - | - | 40 | - | 3.3 | 0.83 |
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| Si3473CDV | P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | 26 | - | 21 | 16 | - | 8 | 4.2 |
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| DMP2104LP | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | 180 | - | - | 92 | - | -1.5 | 0.5 |
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| Si3442BDV | N-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 20 | - | - | 70 | 45 | - | 3 | 0.86 |
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| Si1305DL | P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 8 | 440 | - | 315 | 230 | - | 0.86 | 0.29 |
SC70-3 |
| NTJD4152P | Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | 600 | - | - | 215 | - | -0.88 | 0.272 |
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| DMG6968U | N-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
N | 1 | 20 | 28 | - | - | 21 | - | 6.5 | 0.81 |
SOT-23-3 |
| MAX15024B | 16нс, одноканальные драйверы транзисторов MOSFET с высоким номиналом входного и выходного тока, регулируемым стабилизатором со сверхнизким падением напряжения в корпусе TDFN |
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Maxim Integrated |
Ключи и драйверы MOSFET |
- | 1 | - | - | - | - | - | - | 8 | - |
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| Si7106DN | N-Channel 20-V (D-S) Fast Switching MOSFET |
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Vishay |
MOSFET |
N | 1 | 20 | - | - | 8.1 | 5.1 | - | 12.5 | 1.5 |
PowerPAK_1212-8 |
| FDP8870 | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 16.5 | - | 7.3 | 1.6 |
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| IRF7807 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 25 | - | 8.3 | 2.5 |
SOIC-8 |
| Si4421DY | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 11 | - | 8.5 | 7 | - | 10 | 1.5 |
SOIC-8 |
| CSD86350Q5D | Силовой блок NexFET™ |
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Texas Instruments |
MOSFET |
- | 2 | 25 | - | - | - | 6.6 | - | 0.001 | 2.8 |
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