Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| DMP3098LSS | SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 98 | 56 | -5.3 | 2.5 |
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| IRFR9310 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 400 | - | - | - | - | 7000 | 1.8 | 50 |
D-PAK |
| Si2315BDS | P-Channel, 1.8-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 12 | 71 | - | 50 | 40 | - | 3 | 0.75 |
SOT-23-3 |
| IXTQ26P20P | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -200 | 170 | 170 | 170 | 170 | 170 | -26 | 300 |
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| IXTP10P15T | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -150 | 350 | 350 | 350 | 350 | 350 | -10 | 83 |
TO-220AB |
| NTR4101P | Trench Power MOSFET ?20 V, Single P?Channel, SOT?23 |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | 112 | - | - | 70 | - | -2.4 | 0.73 |
SOT-23-3 |
| Si7117DN | P-Channel 150-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 150 | - | - | - | - | 1000 | 2.17 | 12.5 |
PowerPAK_1212-8 |
| FDN5618P | 60V P-Channel PowerTrench® Specified MOSFET |
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Fairchild Semiconductor |
MOSFET |
P | 1 | -60 | - | - | - | 185 | 148 | -5 | 0.5 |
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| TSM3401CX | P-канальный MOSFET транзистор, -30 В, -3 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 90 | 60 | -3 | 1.25 |
SOT-23-3 |
| IPD90P03P4L-04 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
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Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 5.1 | 3.3 | -90 | 137 |
TO-252 |
| ZVP4525G | 250V P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Zetex |
MOSFET |
P | 1 | -250 | - | - | - | - | 10000 | -0.265 | 2 |
SOT-223-4 |
| Si2319DS | P-Channel 40-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 40 | - | - | - | 100 | 65 | 2.3 | 0.75 |
SOT-23-3 |
| IRF7706GPBF | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 36 | 22 | 7 | 1.51 |
TSSOP-8 |
| Si5905BDC | Dual P-Channel 8-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 8 | 140 | - | 97 | 66 | - | 4 | 3.1 |
ChipFET_1206-8 |
| IRF9520N | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 100 | - | - | - | - | 480 | 6.8 | 48 |
TO-220AB |
| NTMD2P01R2 | Power MOSFET ?2.3 Amps, ?16 Volts Dual SOIC?8 Package |
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ON Semiconductor |
MOSFET |
P | 2 | -16 | - | - | 100 | 70 | - | -2.3 | 0.71 |
SOIC-8 |
| IRFI9540GPBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 200 | 11 | 48 |
TO-220F |
| Si1469DH | P-Channel 20-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | - | - | 126 | 81 | 65 | 1.6 | 2.78 |
SC70-6 |
| IRF7755GPBF | HEXFET Power MOSFETs Dual P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 86 | 51 | - | 3.9 | 1 |
TSSOP-8 |
| ZXMP3F37DN8 | 30V SO8 Dual P-channel enhancement mode MOSFET |
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Zetex |
MOSFET |
P | 2 | -30 | - | - | - | 41 | 25 | -7.3 | 1.25 |
SOIC-8 |
