Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
| TSM2312CX | N-канальный MOSFET транзистор, 20 В, 4.9 А |
|
Taiwan Semiconductor |
MOSFET |
N | 1 | 20 | 51 | 40 | - | 33 | - | 4.9 | 0.75 |
SOT-23-3 |
| IRF7811A | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 28 | - | - | - | 12 | - | 11 | 2.5 |
SOIC-8 |
| Si9434BDY | P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | - | - | 44 | 33 | - | 4.5 | 1.3 |
SOIC-8 |
| TSM3900DCX6 | Сдвоенный N-канальный MOSFET транзистор, 20 В, 2 А |
|
Taiwan Semiconductor |
MOSFET |
N | 2 | 20 | 110 | 70 | - | 55 | - | 2 | 2 |
|
| FDMA430NZ | Single N-Channel 2.5V Specified PowerTrench MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 23.6 | - | 5 | 0.9 |
MicroFET |
| BSH205 | P-channel enhancement mode MOS transistor |
|
NXP |
MOSFET |
P | 1 | 12 | 420 | - | 320 | 180 | - | 0.75 | 0.417 |
SOT-23-3 |
| NTS4001N | Small Signal MOSFET 30 V, 270 mA, Single N?Channel, SC?70 |
|
ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | - | - | 0.27 | 0.33 |
|
| DMN32D2LV | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 1 | 30 | 2200 | - | - | - | - | 0.4 | 0.4 |
|
| Si7703EDN | P-Channel 20-V (D-S) MOSFET With Schottky Diode |
|
Vishay |
MOSFET |
P | 1 | 20 | 72 | - | 57 | 41 | - | 4.3 | 1.3 |
PowerPAK_1212-8 |
| Si1553DL | Complementary 2.5-V (G-S) MOSFET |
|
Vishay |
MOSFET |
N | 2 | 20 | - | - | 1.4 | 850 | - | 0.41 | 0.27 |
SC70-6 |
| NTGS3130N | Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 |
|
ON Semiconductor |
MOSFET |
N | 1 | 20 | - | - | - | 19 | - | 5.6 | 1.1 |
|
| Si3447BDV | P-Channel 12-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 12 | 60 | - | 44 | 33 | - | 4.5 | 1.1 |
|
| PHT11N06LT | TrenchMOS (tm) transistor Logic level FET |
|
NXP |
MOSFET |
N | 1 | 55 | - | - | - | 30 | - | 10.7 | 8.3 |
SOT-223-4 |
| FDW9926A | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 24 | - | 4.5 | 1 |
TSSOP-8 |
| DMP2130LDM | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | 82 | 51 | - | -3.4 | 1.25 |
|
| Si3900DV | Dual N-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 2 | 20 | - | - | 160 | 100 | - | 2 | 0.83 |
|
| IRL630A | Advanced Power MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | 400 | - | 9 | 69 |
TO-220 |
| Si1903DL | Dual P-Channel 2.5-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 20 | - | - | 1400 | 850 | - | 0.41 | 0.27 |
SC70-6 |
| CSD16322Q5C | N-канальный силовой MOSFET DualCool™ NexFET™ |
|
Texas Instruments |
MOSFET |
N | 1 | 25 | - | - | - | 4.6 | - | 97 | 3.1 |
|
| NTJS3151P | Trench Power MOSFET 12 V, 3.3 A, Single P?Channel, ESD Protected SC?88 |
|
ON Semiconductor |
MOSFET |
P | 1 | -12 | 133 | - | - | 45 | - | -2.7 | 0.625 |
|
