Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| NTD18N06L | Power MOSFET 18 Amps, 60 Volts, Logic Level N?Channel DPAK |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | - | 18 | 55 |
D-PAK |
| CSD16325Q5C | N-канальный силовой MOSFET DualCool™ NexFET™ |
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Texas Instruments |
MOSFET |
N | 1 | 25 | - | - | - | 1.7 | - | 100 | 3.1 |
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| IRF7410 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 12 | - | - | - | 7 | - | 16 | 2.5 |
SOIC-8 |
| NTJD5121N | Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88 |
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ON Semiconductor |
MOSFET |
N | 2 | 60 | - | - | - | 290 | - | 0.295 | 0.25 |
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| ZXM62P02E6 | 20V P-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
P | 1 | -20 | - | - | - | 200 | - | -2.3 | 1.7 |
SOT-23-6 |
| DMN2004K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 1 | 20 | 700 | - | - | 400 | - | 0.54 | 0.35 |
SOT-23-3 |
| Si5935DC | Dual P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 137 | - | 97 | 69 | - | 3 | 1.1 |
ChipFET_1206-8 |
| Si9424BDY | P-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 19 | 14 | - | 5.6 | 1.25 |
SOIC-8 |
| FDMA910PZ | P-канальные MOSFET-транзисторы PowerTrench® -20В, -9.4А |
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Fairchild Semiconductor |
MOSFET |
P | 1 | -20 | 34 | 24 | - | 20 | - | -9.4 | 2.4 |
MicroFET |
| NTP18N06L | Power MOSFET 15 Amps, 60 Volts, Logic Level N?Channel TO-220 |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | - | 15 | 48.4 |
TO-220 |
| FQP5N60C | 600V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | 2000 | - | 4.5 | 100 |
TO-220 |
| DMN3200U | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 62 | - | 2.2 | 0.65 |
SOT-23-3 |
| Si7403BDN | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 80 | 59 | - | 8 | 9.6 |
PowerPAK_1212-8 |
| NTGD3148N | Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 |
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ON Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 41.7 | - | 3 | 0.9 |
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| Si3471CDV | P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | 35 | - | 27 | 21 | - | 8 | 3.8 |
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| TSM4433CS | P-канальный MOSFET транзистор, -20 В, -3.9 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | 150 | 110 | - | 90 | - | -3.9 | 2.5 |
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| DMP2123L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | 87 | 51 | - | -3 | 1.4 |
SOT-23-3 |
| FDMA410NZ | Single N-Channel 1.5 V Specified PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 20 | 24 | - | - | 17 | - | 9.5 | 2.4 |
MicroFET |
| Si1913DH | Dual P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 850 | - | 610 | 400 | - | 0.88 | 0.57 |
SC70-6 |
| NTP30N06L | Power MOSFET 30 Amps, 60 Volts, Logic Level, N?Channel TO-220 |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | - | 30 | 88.2 |
TO-220 |
