Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| Si3493BDV | P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | 34.7 | - | 28.4 | 23 | - | 8 | 2.97 |
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| IRFP244PBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 250 | - | - | - | - | 280 | 15 | 150 |
TO-247AC |
| Si2308BDS | N-Channel 60-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 60 | - | - | - | 160 | 130 | 2.3 | 1.66 |
SOT-23-3 |
| IRF740LC | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 550 | 10 | 125 |
TO-220AB |
| Si1488DH | N-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 20 | 54 | - | 47 | 41 | 15 | 6.1 | 2.8 |
SC70-6 |
| SiA917DJ | Dual P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 20 | - | - | 152 | 91 | - | 4.5 | 6.5 |
PowerPAK SC70-6 |
| IRFPE40PBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 800 | - | - | - | - | 2000 | 5.4 | 150 |
TO-247AC |
| Si7852ADP | N-Channel 80-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 80 | - | - | - | - | 14 | 30 | 62.5 |
PowerPAK_SO-8 |
| IRFBC30LPBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 2200 | 3.6 | 74 |
TO-262 |
| SiE810DF | N-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 20 | - | - | 2.2 | 1.3 | 1.1 | 60 | 125 |
|
| Si3475DV | P-Channel 200-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 1340 | 0.95 | 3.2 |
|
| IRF9520S | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 600 | 6.8 | 60 |
D2-PAK |
| IRFSL11N50APBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 550 | 11 | 190 |
TO-262 |
| Si5853CDC | P-Channel 20-V (D-S) MOSFET with Schottky Diode |
|
Vishay |
MOSFET |
P | 1 | 20 | 170 | - | 120 | 86 | - | 4 | 3.1 |
ChipFET_1206-8 |
| IRFD320PBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 1800 | 0.49 | 1 |
HEXDIP |
| Si5904DC | Dual N-Channel 2.5-V (G-S) MOSFET |
|
Vishay |
MOSFET |
N | 2 | 20 | - | - | 115 | 65 | - | 3.1 | 1.1 |
ChipFET_1206-8 |
| ZVN2106A | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
|
Zetex |
MOSFET |
N | 1 | 60 | - | - | - | - | 2000 | 0.45 | 0.7 |
TO-92 |
| ZXMP10A17E6 | 100V P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Zetex |
MOSFET |
P | 1 | -100 | - | - | - | - | 350 | -1.6 | 1.1 |
SOT-23-6 |
| ZXMN2F30FH | 20V SOT23 N-channel enhancement mode MOSFET |
|
Zetex |
MOSFET |
N | 1 | 20 | - | - | - | 45 | - | 4.9 | 1.4 |
SOT-23-3 |
| ZVP3306F | SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
|
Zetex |
MOSFET |
P | 1 | -60 | - | - | - | - | 14000 | -0.09 | 0.33 |
SOT-23-3 |
