Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRL3102 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | - | 15 | - | 61 | 89 |
TO-220AB |
| NDC7002N | Dual N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 50 | - | - | - | 1600 | - | 0.51 | 0.96 |
SSOT-6 |
| DMN3115UDM | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 40 | - | 3.2 | 0.9 |
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| Si7413DN | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 23 | - | 16 | 12 | - | 8.4 | 1.5 |
PowerPAK_1212-8 |
| TSM3460CX6 | N-канальный MOSFET транзистор, 20 В, 6 А, ESD защита |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 20 | 80 | 50 | - | 30 | - | 6 | 1.3 |
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| NTF6P02T3 | Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223 |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 44 | - | -10 | 8.3 |
SOT-223-4 |
| DMG3415U | P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | 51 | - | - | 31 | - | -4 | 0.9 |
SOT-23-3 |
| DMP2066LSS | SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 40 | - | -6.5 | 2.5 |
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| Si2312BDS | N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 20 | 36 | - | 30 | 25 | - | 3.9 | 0.75 |
SOT-23-3 |
| Si1307EDL | P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | 480 | - | 350 | 240 | - | 0.85 | 0.29 |
SC70-3 |
| NTJD4001N | Small Signal MOSFET 30 V, 250 mA, Dual N-Channel, SC-88 |
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ON Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | - | - | 250 | 272 |
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| ZXMN2F34MA | 20V N-channel enhancement mode MOSFET in DFN322 |
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Zetex |
MOSFET |
N | 1 | 20 | - | - | - | 60 | - | 5.1 | 2.2 |
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| MAX15024A | 16нс, одноканальные драйверы транзисторов MOSFET с высоким номиналом входного и выходного тока, регулируемым стабилизатором со сверхнизким падением напряжения в корпусе TDFN |
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Maxim Integrated |
Ключи и драйверы MOSFET |
- | 1 | - | - | - | - | - | - | 8 | - |
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| Si7102DN | N-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 12 | - | - | 3.7 | 3.1 | - | 35 | 52 |
PowerPAK_1212-8 |
| Si4423DY | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 9 | - | 7.1 | 6 | - | 10 | 1.5 |
SOIC-8 |
| IRF7304 | HEXFET Power MOSFETs Dual P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 140 | 90 | - | 4.3 | 2 |
SOIC-8 |
| FDN335N | N-Channel 2.5V Specified PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 20 | - | - | - | 55 | - | 1.7 | 0.5 |
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| Si7107DN | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 16.7 | - | 12.5 | 9 | - | 9.8 | 1.5 |
PowerPAK_1212-8 |
| BS107P | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Diodes Incorporated |
MOSFET |
N | 1 | 200 | - | - | - | - | - | 0.12 | 0.5 |
TO-92 |
| Si3451DV | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 164 | 92 | - | 2.8 | 2.1 |
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