Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| STF11NM60N | N-channel 600 V - 0.37 ? - 10 A - TO-220FP second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 370 | 10 | 25 |
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| Si6925ADQ | Dual N-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | - | - | 50 | 35 | - | 3.3 | 0.8 |
TSSOP-8 |
| FDP8896 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 6 | 5 | 92 | 80 |
TO-220AB |
| IRF9510PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 1200 | 4 | 43 |
TO-220AB |
| IRLS4030PbF | 100V Single N-Channel HEXFET Power MOSFET |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | 3.4 | 3.6 | 180 | 370 |
D2-PAK |
| STW12NM60N | N-channel 600V - 0.35? - 10A - TO-247 Second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 350 | 10 | 90 |
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| NTD4806N | Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK |
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ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 7.9 | 4.9 | 14 | 2.14 |
D-PAK |
| IRLU7807ZCPBF | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 18.2 | 13.8 | 43 | 40 |
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| FQPF3N80C | 800V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 800 | - | - | - | - | 4000 | 3 | 39 |
TO-220F |
| FDS8874 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 5.6 | 4.9 | 16 | 2.5 |
SOIC-8 |
| IXFV110N10PS | PolarHT HiPerFET Power MOSFET |
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ISSI |
MOSFET |
N | 1 | 100 | - | - | - | - | 15 | 110 | 480 |
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| STP2NK60Z | N-CHANNEL 600V - 7.2? - 1.4A TO-220 Zener-Protected SuperMESH™ MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 7200 | 1.4 | 45 |
TO-220 |
| IRF7607 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | 45 | 30 | - | 6.5 | 1.8 |
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| Si9933BDY | Dual P-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | - | - | 8 | 48 | - | 3.6 | 1.1 |
SOIC-8 |
| SPD07N20-G | SIPMOS™ Power-Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 200 | - | - | - | - | 300 | 7 | 40 |
TO-252 |
| TSM8N50CP | N-канальный MOSFET транзистор, 500 В, 7.2 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 850 | 7.2 | 89 |
TO-252 |
| STP30NM60ND | N-channel 600 V, 0.11 ?, 25 A FDmesh™ II Power MOSFET(with fast diode) TO-220 |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 110 | 25 | 190 |
TO-220 |
| Si4688DY | N-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 12 | 9 | 8.9 | 1.4 |
SOIC-8 |
| FQT4N20L | 200V LOGIC N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 1100 | 0.85 | 2.2 |
SOT-223-4 |
| STL60N10F7 | N-канальный силовой транзистор MOSFET семейства STripFET™ VII DeepGATE™, 100 В, 12 А |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 16.5 | 12 | 5 |
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