Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
FDD20AN06A0 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 17 | 45 | 90 |
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STF30NM60N | N-channel 600 V, 0.1 ?, 25 A, MDmesh™ II Power MOSFET TO-220FP | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 100 | 25 | 40 |
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FDMC86340ET80 | N-канальный MOSFET транзистор, выполненный по технологии PowerTrench®, 80 В, 68 А | Fairchild Semiconductor |
MOSFET |
N | 1 | 80 | - | - | - | - | 6.5 | 68 | 65 |
Power 33 |
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SUP36N20-54P | N-Channel 200-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 200 | - | - | - | - | 44 | 36 | 166 |
TO-220 |
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FDP8896 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 6 | 5 | 92 | 80 |
TO-220AB |
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TSM1NB60CW | Силовой N-канальный MOSFET транзистор, 600 В, 0.5 А | Taiwan Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 10000 | 0.5 | 2.1 |
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STF11NM60N | N-channel 600 V - 0.37 ? - 10 A - TO-220FP second generation MDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 370 | 10 | 25 |
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Si6925ADQ | Dual N-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
N | 2 | 20 | - | - | 50 | 35 | - | 3.3 | 0.8 |
TSSOP-8 |
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IPI80N06S4L-05 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor | Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | 5.7 | 4.2 | 80 | 107 |
TO-262 |
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IRF9510PBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 1200 | 4 | 43 |
TO-220AB |
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FQPF3N80C | 800V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 800 | - | - | - | - | 4000 | 3 | 39 |
TO-220F |
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STW12NM60N | N-channel 600V - 0.35? - 10A - TO-247 Second generation MDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 350 | 10 | 90 |
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IRLU7807ZCPBF | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 18.2 | 13.8 | 43 | 40 |
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IRLS4030PbF | 100V Single N-Channel HEXFET Power MOSFET | International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | 3.4 | 3.6 | 180 | 370 |
D2-PAK |
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NTD4806N | Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK | ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 7.9 | 4.9 | 14 | 2.14 |
D-PAK |
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IXFV110N10PS | PolarHT HiPerFET Power MOSFET | ISSI |
MOSFET |
N | 1 | 100 | - | - | - | - | 15 | 110 | 480 |
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IRF7607 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | 45 | 30 | - | 6.5 | 1.8 |
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FDS8874 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 5.6 | 4.9 | 16 | 2.5 |
SOIC-8 |
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STP2NK60Z | N-CHANNEL 600V - 7.2? - 1.4A TO-220 Zener-Protected SuperMESH™ MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 7200 | 1.4 | 45 |
TO-220 |
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Si9933BDY | Dual P-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | - | - | 8 | 48 | - | 3.6 | 1.1 |
SOIC-8 |