Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
| NDS351AN | N-Channel, Logic Level, PowerTrench MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 120 | 92 | 1.4 | 0.5 |
|
| IRFD224 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 250 | - | - | - | - | 1100 | 0.63 | 1 |
HEXDIP |
| DMN3051L | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 54 | 33 | 5.8 | 1.4 |
SOT-23-3 |
| IRFS23N20D | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 200 | - | - | - | - | 100 | 24 | 170 |
D2-PAK |
| STD10NF10 | N-channel 100V - 0.115? - 13A - DPAK - IPAK Low gate charge STripFET™ II Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 115 | 13 | 50 |
D-PAK |
| STP11NM80 | N-channel 800 V - 0.35 ? - 11 A - TO-220 MDmesh™ Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 800 | - | - | - | - | 350 | 11 | 150 |
TO-220 |
| FDB3502 | 75V N-Channel Power Trench MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 75 | - | - | - | - | 37 | 6 | 3.1 |
D2-PAK |
| FQP90N10V2 | 100V N-Channel MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 8.5 | 90 | 250 |
TO-220 |
| IRF6623 | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | - | 9.7 | 5.7 | 55 | 42 |
|
| STD110NH02L | N-channel 24V - 0.0044? - 80A - DPAK STripFET™ III Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 24 | - | - | - | - | 4.4 | 80 | 125 |
D-PAK |
| NVMFS5C612NL | N-канальный MOSFET-транзистор поколения Trench 6 с напряжением сток-исток 60 В |
|
ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | 2.3 | 1.5 | 235 | 167 |
|
| STD5NK52ZD | N-channel 520 V,1.22 ?,4.4 A,IPAK,DPAK Zener-protected SuperMESH™ Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 520 | - | - | - | - | 1220 | 4.4 | 70 |
D-PAK |
| Si8407DB | P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | 33 | - | 26 | 22 | - | 5.8 | 1.47 |
|
| NTD5806N | Power MOSFET 40V 33A 19 mOhm Single N-Channel DPAK |
|
ON Semiconductor |
MOSFET |
N | 1 | 40 | - | - | - | 17.8 | 12.7 | 33 | 40 |
D-PAK |
| TSM3404CX | N-канальный MOSFET транзистор, 30 В, 5.8 А |
|
Taiwan Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 43 | 30 | 5.8 | 0.75 |
SOT-23-3 |
| SiE822DF | N-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 20 | - | - | - | 4.5 | 2.8 | 50 | 104 |
|
| STP19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - TO-220 second generation MDmesh™ Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 150 |
TO-220 |
| HUF75345G3 | N-Channel UltraFET Power MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 55 | - | - | - | - | 7 | 75 | 325 |
|
| IRF9Z14 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 500 | 6.7 | 43 |
TO-220AB |
| ZVP4424G | SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
|
Zetex |
MOSFET |
P | 1 | -240 | - | - | - | - | 7100 | -0.48 | 2.5 |
SOT-223-4 |
