Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| STD6N52K3 | N-channel 525 V, 1 ?, 5 A, DPAK SuperMESH3™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 525 | - | - | - | - | 100 | 5 | 70 |
D-PAK |
| IRLI620GPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 200 | - | - | - | - | 800 | 4 | 30 |
TO-220F |
| NTP75N06 | Power MOSFET 75 Amps, 60 Volts N-Channel TO-220 |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 8.2 | 75 | 214 |
TO-220 |
| IRLU8726PbF | 30V Single N-Channel HEXFET Power MOSFET |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 5.8 | 4 | 86 | 75 |
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| IRLR8203 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 9 | 6.8 | 110 | 140 |
D-PAK |
| FQPF9N50C | 500V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | 650 | - | 9 | 44 |
TO-220F |
| STW75NF20 | N-channel 200V - 0.028? - 75A - TO-247 Low gate charge STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 200 | - | - | - | - | 28 | 75 | 190 |
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| IRFI730GPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 1000 | 3.7 | 35 |
TO-220F |
| 2N7002A | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 3000 | 0.115 | 0.25 |
SOT-23-3 |
| IRFSL33N15D | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 56 | 33 | 3.8 |
TO-262 |
| STE180NE10 | N-channel 100V - 4.5m? - 180A - ISOTOP STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 4500 | 180 | 360 |
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| FC40SA50FK | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 84 | 40 | 430 |
SOT-227 |
| STB8NM60D | N-CHANNEL 600V - 0.9? - 8A - D2PAK Fast Diode MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 900 | 8 | 100 |
D2-PAK |
| FDB2614 | 200V N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 22.9 | 62 | 260 |
D2-PAK |
| TK31Z60X | N-канальныq MOSFET транзистор семейства DTMOS IV-H с рабочим напряжением 600 В |
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Toshiba |
MOSFET |
N | 1 | 600 | - | - | - | - | 88 | 30.8 | 230 |
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| IRF7451 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 90 | 3.6 | 2.5 |
SOIC-8 |
| STP95N4F3 | N-channel 40V - 5.4m? - 80A - TO-220 STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 40 | - | - | - | - | 5.4 | 80 | 110 |
TO-220 |
| Si7540DP | N- and P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
N+P | 2 | 12 | - | - | 43 | 26 | - | 5.7 | 1.4 |
PowerPAK_SO-8 |
| TSM4NB50CP | Силовой N-канальный MOSFET транзистор, 500 В, 3 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 2700 | 3 | 45 |
TO-252 |
| IPB021N06N3G | OptiMOS™ 3 Power-Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 1.8 | 120 | 250 |
TO-263-3 |
