Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| STB55NF06 | N-channel 60V - 0.015? - 50A - D2PAK/I2PAK STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 60 | - | - | - | - | 15 | 50 | 110 |
D2-PAK |
| FQA8N100C | 1000V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 1000 | - | - | - | - | 1200 | 8 | 225 |
TO-3PN |
| STB9NK70Z | N-CHANNEL 700V - 1W - 7.5A D2PAK/I2PAK Zener-Protected SuperMESH™Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 700 | - | - | - | - | 1000 | 7.5 | 115 |
D2-PAK |
| Si3457CDV | P-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 92 | 60 | 5.1 | 3 |
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| IRF540N | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 44 | 33 | 140 |
TO-220AB |
| STP200NF03 | N-channel 30V - 0.0032? - 120A - TO220 STripFET™ III Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | - | 3.2 | 120 | 300 |
TO-220 |
| FDMC86340ET80 | N-канальный MOSFET транзистор, выполненный по технологии PowerTrench®, 80 В, 68 А |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 80 | - | - | - | - | 6.5 | 68 | 65 |
Power 33 |
| FDD20AN06A0 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 17 | 45 | 90 |
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| STF30NM60N | N-channel 600 V, 0.1 ?, 25 A, MDmesh™ II Power MOSFET TO-220FP |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 100 | 25 | 40 |
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| SUP36N20-54P | N-Channel 200-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 200 | - | - | - | - | 44 | 36 | 166 |
TO-220 |
| FDP8896 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 6 | 5 | 92 | 80 |
TO-220AB |
| TSM1NB60CW | Силовой N-канальный MOSFET транзистор, 600 В, 0.5 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 10000 | 0.5 | 2.1 |
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| STF11NM60N | N-channel 600 V - 0.37 ? - 10 A - TO-220FP second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 370 | 10 | 25 |
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| IPI80N06S4L-05 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | 5.7 | 4.2 | 80 | 107 |
TO-262 |
| IRF9510PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 1200 | 4 | 43 |
TO-220AB |
| FQPF3N80C | 800V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 800 | - | - | - | - | 4000 | 3 | 39 |
TO-220F |
| IRLU7807ZCPBF | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 18.2 | 13.8 | 43 | 40 |
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| STW12NM60N | N-channel 600V - 0.35? - 10A - TO-247 Second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 350 | 10 | 90 |
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| IRLS4030PbF | 100V Single N-Channel HEXFET Power MOSFET |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | 3.4 | 3.6 | 180 | 370 |
D2-PAK |
| NTD4806N | Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK |
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ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 7.9 | 4.9 | 14 | 2.14 |
D-PAK |
