Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRFP4321PBF | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 15.5 | 78 | 310 |
TO-247AC |
| FDPF5N50 | N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 1150 | 5 | 28 |
TO-220F |
| STB140NF55-1 | N-channel 55V - 0.0065Ом - 80A - D2PAK - STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 55 | - | - | - | - | 6.5 | 80 | 300 |
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| STW43NM50N | N-channel 500 V, 0.070 ?, 37 A MDmesh™ II Power MOSFET TO-247 |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 70 | 37 | 255 |
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| FDB16AN08A0 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 70 | - | - | - | - | 13 | 58 | 135 |
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| FCMT199N60 | N-канальный MOSFET-транзистор семейства SuperFET® II, 600 В, 20.2 А |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 199 | 20.2 | 208 |
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| PSMN025-100D | N-канальный TrenchMOS™ транзистор |
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NXP |
MOSFET |
N | 1 | 100 | - | - | - | - | 22 | 47 | 150 |
D-PAK |
| STF21NM60ND | N-channel 600 V, 0.17 ?, 17 A FDmesh™ II Power MOSFET TO-220FP |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 170 | 17 | 30 |
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| Si7464DP | N-Channel 200-V (D-S) Fast Switching MOSFET |
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Vishay |
MOSFET |
N | 1 | 200 | - | - | - | - | 195 | 1.8 | 1.8 |
PowerPAK_SO-8 |
| FQPF11N40C | 400V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 400 | - | - | - | - | 430 | 10.5 | 44 |
TO-220F |
| BSC016N06NS | Транзистор серии OptiMOS™ на 60 В, 100 А |
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Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 1.6 | 100 | 139 |
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| STD6N52K3 | N-channel 525 V, 1 ?, 5 A, DPAK SuperMESH3™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 525 | - | - | - | - | 100 | 5 | 70 |
D-PAK |
| IRLI620GPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 200 | - | - | - | - | 800 | 4 | 30 |
TO-220F |
| STW75NF20 | N-channel 200V - 0.028? - 75A - TO-247 Low gate charge STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 200 | - | - | - | - | 28 | 75 | 190 |
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| NTP75N06 | Power MOSFET 75 Amps, 60 Volts N-Channel TO-220 |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 8.2 | 75 | 214 |
TO-220 |
| IRFI730GPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 1000 | 3.7 | 35 |
TO-220F |
| IRFSL33N15D | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 56 | 33 | 3.8 |
TO-262 |
| 2N7002A | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 3000 | 0.115 | 0.25 |
SOT-23-3 |
| STE180NE10 | N-channel 100V - 4.5m? - 180A - ISOTOP STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 4500 | 180 | 360 |
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| FC40SA50FK | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 84 | 40 | 430 |
SOT-227 |
