Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
TSM2301BCX | P-канальный MOSFET транзистор, -20 В, -2.8 А | Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | 190 | 150 | - | 100 | - | -2.8 | 0.9 |
SOT-23-3 |
|
TJ20S04M3L | Силовой P-канальный MOSFET-транзистор | Toshiba |
MOSFET |
P | 1 | -40 | - | - | - | - | 22.2 | -20 | 41 |
|
|
MTP2P50E | Power MOSFET 2 Amps, 500 Volts P?Channel TO?220 | ON Semiconductor |
MOSFET |
P | 1 | 500 | - | - | - | - | 4500 | 2 | 75 |
TO-220AB |
|
ZVP2110A | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex |
MOSFET |
P | 1 | -100 | - | - | - | - | 8000 | -0.23 | 0.7 |
TO-92 |
|
Si9435BDY | P-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 56 | 33 | 4.1 | 1.3 |
SOIC-8 |
|
IRF7416QPBF | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 35 | 20 | 10 | 2.5 |
SOIC-8 |
|
NTGS3441T1 | Power MOSFET 1 Amp, 20 Volts P?Channel TSOP?6 | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 69 | - | -1.65 | 0.5 |
|
|
IRF9Z34NL | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 55 | - | - | - | - | 100 | 19 | 68 |
TO-262 |
|
IRFD9210PBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 3000 | 0.4 | 1 |
HEXDIP |
|
NTLJD2104P | Power MOSFET ?12 V, ?4.3 A, COOL Dual P?Channel, 2x2 mm, WDFN package | ON Semiconductor |
MOSFET |
P | 2 | -12 | 110 | - | - | 60 | - | -3.5 | 1.5 |
|
|
Si1303EDL | P-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | - | - | 560 | 360 | - | 0.67 | 0.29 |
SC70-3 |
|
SQJ941EP | Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET | Vishay |
MOSFET |
P | 2 | -30 | - | - | - | 39 | 24 | -8 | 55 |
PowerPAK_SO-8 |
|
PMV65XP | P-channel TrenchMOS™ extremely low level FET | NXP |
MOSFET |
P | 1 | 20 | - | - | 90 | 65 | - | 3.9 | 1.92 |
SOT-23-3 |
|
NTMS4177P | Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 | ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 15 | 10 | -8.9 | 1.52 |
SOIC-8 |
|
ZXMP3A16DN8 | DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 2 | -30 | - | - | - | 70 | 45 | -5.5 | 1.25 |
SOIC-8 |
|
Si3451DV | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | - | - | 164 | 92 | - | 2.8 | 2.1 |
|
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FDMC6679AZ | P-канальный MOSFET-транзистор PowerTrench® -30 В, 20 А, 10 мОм | Fairchild Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 18 | 10 | 20 | 41 |
|
|
IXTH52P10P | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -100 | 50 | 50 | 50 | 50 | 50 | -52 | 300 |
|
|
IXTP48P05T | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -50 | 30 | 30 | 30 | 30 | 30 | -48 | 150 |
TO-220AB |
|
Si7439DP | P-Channel 150-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 150 | - | - | - | - | 73 | 3 | 1.9 |
PowerPAK_SO-8 |