Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| NTR4502P | Power MOSFET ?30 V, ?1.95 A, Single, P?Channel, SOT?23 |
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ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 240 | 155 | -1.95 | 1.25 |
SOT-23-3 |
| TSM4431CS | P-канальный MOSFET транзистор, -30 В, -5.8 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 70 | 40 | -5.8 | 2.5 |
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| FDMS6673BZ | P-канальный MOSFET транзистор PowerTrench® -30 В, -28 А, 6.8 мОм |
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Fairchild Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 12.5 | 6.8 | 28 | 73 |
Power 56 |
| FDN360P | Single P-Channel PowerTrench® MOSFET |
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Fairchild Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 100 | 63 | -10 | 0.5 |
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| TSM4425CS | P-канальный MOSFET транзистор, -30 В, -11 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 19 | 12 | -11 | 2.5 |
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| DMP3160L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 165 | 97 | -2.7 | 1.08 |
SOT-23-3 |
| NTR4171P | Power MOSFET ?30 V, ?3.5 A, Single P?Channel, SOT?23 |
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ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 60 | 50 | -2.2 | 0.48 |
SOT-23-3 |
| TSM3481CX6 | P-канальный MOSFET транзистор, -30 В, -5.3 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 79 | 48 | -5.3 | 2 |
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| FDN358P | Single P-Channel, Logic Level, PowerTrench® MOSFET |
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Fairchild Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 161 | 105 | -1.5 | 0.5 |
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| DMP3130L | P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 73 | 59 | -3.5 | 1.4 |
SOT-23-3 |
| NTF5P03T3 | Power MOSFET 5.2 Amps, 30 Volts P?Channel SOT?223 |
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ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 107 | 76 | -5.2 | 3.13 |
SOT-223-4 |
| TSM3457CX6 | P-канальный MOSFET транзистор, -30 В, -5 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 100 | 60 | -5 | 2 |
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| TSM3455CX6 | P-канальный MOSFET транзистор, -30 В, -3.5 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 170 | 100 | -3.5 | 2 |
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| IRFTS9342TRPBF | Однокристальный p-канальный МОП-транзистор с технологией HEXFET на 30В в корпусе TSOP-6 (Micro 6) |
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International Rectifier (IRF) |
MOSFET |
P | 1 | -30 | - | - | - | 66 | 40 | -5.8 | 2 |
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| DMP3120L | P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 120 | - | -2.8 | 1.4 |
SOT-23-3 |
| DMP3100L | P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 147 | 86 | -2.7 | 1.08 |
SOT-23-3 |
| SQJ941EP | Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET |
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Vishay |
MOSFET |
P | 2 | -30 | - | - | - | 39 | 24 | -8 | 55 |
PowerPAK_SO-8 |
| DMP3098LSS | SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 98 | 56 | -5.3 | 2.5 |
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| TSM3401CX | P-канальный MOSFET транзистор, -30 В, -3 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 90 | 60 | -3 | 1.25 |
SOT-23-3 |
| DMP3098LSD | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 2 | -30 | - | - | - | 98 | 56 | -4.4 | 1.8 |
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