Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| TSM1N80CW | Силовой N-канальный MOSFET транзистор, 800 В, 0.15 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 800 | - | - | - | - | 21600 | 0.15 | 2.1 |
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| STF10NM65N | N-channel 650 V, 0.43 ?, 9 A MDmesh™ II Power MOSFET TO-220FP |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 430 | 9 | 25 |
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| IPI45N06S4-09 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 7.9 | 45 | 71 |
TO-262 |
| IRLZ44PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 60 | - | - | - | - | 28 | 50 | 150 |
TO-220AB |
| FCPF11N60 | SuperFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 650 | - | - | - | - | 320 | 11 | 125 |
TO-220F |
| STD12NM50ND | N-channel 500 V, 0.29 ?, 11 A, FDmesh™ II Power MOSFET (with fast diode), DPAK |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 290 | 11 | 100 |
D-PAK |
| IRFIBE30G | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 800 | - | - | - | - | 3000 | 2.1 | 35 |
TO-220F |
| IRFU2307Z | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 75 | - | - | - | - | 16 | 42 | 110 |
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| STP14NF12FP | N-channel 120V - 0.16? - 14A - TO-220FP low gate charge STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 120 | - | - | - | - | 160 | 8.5 | 25 |
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| DMN66D0LDW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 2 | 60 | - | - | - | - | 3000 | 0.8 | 0.25 |
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| STF3HNK90Z | N-channel 900V - 0.35? - 3A - TO-220FP Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 800 | - | - | - | - | 3500 | 3 | 25 |
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| IRF520S | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 100 | - | - | - | - | 270 | 9.2 | 60 |
D2-PAK |
| IRF7492 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 200 | - | - | - | - | 79 | 3.7 | 2.5 |
SOIC-8 |
| IXFH110N10P | PolarHT HiPerFET Power MOSFET |
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ISSI |
MOSFET |
N | 1 | 100 | - | - | - | - | 15 | 110 | 480 |
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| FQI5N90 | 900V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 1800 | 5.4 | 158 |
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| STQ2HNK60ZR-AP | N-channel 600V - 4.4? - 2A - TO-92 Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 4400 | 0.5 | 3 |
TO-92 |
| FDB12N50TM | N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 550 | 11.5 | 165 |
D2-PAK |
| TSM8N70CI | Силовой N-канальный MOSFET транзистор, 700 В, 8 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 700 | - | - | - | - | 900 | 8 | 40 |
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| STB30NM60ND | N-channel 600 V, 0.11 ?, 25 A FDmesh™ II Power MOSFET(with fast diode) D2PAK |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 110 | 25 | 190 |
D2-PAK |
| BUZ31H3045A | SIPMOS™ Power-Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 200 | - | - | - | - | 160 | 14.5 | 95 |
TO-263-3 |
