Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| SiA426DJ | N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 20 | - | - | 30.1 | 21.9 | 19.6 | 4.5 | 19 |
PowerPAK SC70-6 |
| Si2307BDS | P-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 105 | 63 | 2.5 | 0.75 |
SOT-23-3 |
| IRLZ44SPBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 60 | - | - | - | - | 28 | 50 | 150 |
D2-PAK |
| IRFRC20PBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 4400 | 2 | 42 |
D-PAK |
| Si5433BDC | P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | 56 | - | 41 | 30 | - | 4.8 | 1.3 |
ChipFET_1206-8 |
| IRFD220 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 200 | - | - | - | - | 800 | 0.8 | 1 |
HEXDIP |
| Si4952DY | Dual N-Channel 25-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 2 | 25 | - | - | - | 23 | 19 | 8 | 2.8 |
SOIC-8 |
| IRFI9610GPBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 3000 | 2 | 27 |
TO-220F |
| Si1403BDL | P-Channel 2.5-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | - | - | 220 | 120 | - | 1.4 | 0.568 |
SC70-6 |
| IRFIBE30G | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 800 | - | - | - | - | 3000 | 2.1 | 35 |
TO-220F |
| SUM110N04-2m3L | N-Channel 40-V (D-S) 175°C MOSFET |
|
Vishay |
MOSFET |
N | 1 | 40 | - | - | - | 2.4 | 1.9 | 110 | 375 |
D2-PAK |
| IRF624S | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 250 | - | - | - | - | 1100 | 4.4 | 50 |
D2-PAK |
| Si6983DQ | Dual P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 20 | 33 | - | 24 | 19 | - | 4.6 | 0.83 |
TSSOP-8 |
| IRFP32N50K | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 135 | 32 | 460 |
TO-247AC |
| Si7960DP | Dual N-Channel 60-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 2 | 60 | - | - | - | 20 | 17 | 6.2 | 1.4 |
PowerPAK_SO-8 |
| IRF830AL | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 1400 | 5 | 74 |
TO-262 |
| Si4398DY | N-Channel Reduced Qg, Fast Switching WFET |
|
Vishay |
MOSFET |
N | 1 | 20 | - | - | - | 3.3 | 2.3 | 19 | 1.6 |
SOIC-8 |
| Si1419DH | P-Channel 200-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 3980 | 0.3 | 1 |
SC70-6 |
| IRLD024 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 60 | - | - | - | - | 100 | 2.5 | 1.3 |
HEXDIP |
| IRFPS29N60LPBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 175 | 29 | 480 |
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