Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| Si5519DU | N- and P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N+P | 2 | 20 | - | - | 78 | 53 | - | 6 | 10.4 |
PowerPAK_ChipFET |
| IRF8910 | HEXFET Power MOSFETs Dual N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 2 | 20 | - | - | - | 18.3 | 13.4 | 10 | 2 |
SOIC-8 |
| CSD75205W1015 | Сдвоенный P-канальный силовой MOSFET NexFET™ с общим истоком |
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Texas Instruments |
MOSFET |
P | 2 | -20 | 145 | - | - | 95 | - | -1.2 | 0.75 |
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| Si4388DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
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Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 14 | 12.5 | 11.3 | 3.5 |
SOIC-8 |
| STS4DNF30L | Dual N-channel 30V - 0.039? - 4A SO-8 STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 2 | 30 | - | - | - | 46 | 39 | 4 | 2 |
SOIC-8 |
| FDY2000PZ | -20V Dual P-Channel Specified PowerTrench® MOSFET |
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Fairchild Semiconductor |
MOSFET |
P | 2 | -20 | 2700 | 1600 | - | 1200 | - | -0.35 | 0.625 |
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| IRF7756 | HEXFET Power MOSFETs Dual P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 2 | 12 | - | - | 58 | 40 | - | 3.4 | 1 |
TSSOP-8 |
| FDS6910 | Dual N-Channel Logic Level PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 13 | 10.6 | 7.5 | 1.6 |
SOIC-8 |
| MMDF3N02HD | Power MOSFET 3 Amps, 20 Volts N?Channel SO?8, Dual |
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ON Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 74 | 58 | 3.8 | 2 |
SOIC-8 |
| Si5905BDC | Dual P-Channel 8-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 8 | 140 | - | 97 | 66 | - | 4 | 3.1 |
ChipFET_1206-8 |
| Si4922BDY | Dual N-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 30 | - | - | 18 | 14.5 | 13.5 | 8 | 3.1 |
SOIC-8 |
| TSM4416DCS | Сдвоенный N-канальный MOSFET транзистор, 30 В, 11 А |
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Taiwan Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 24 | 15 | 11 | 2.5 |
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| ZXMP6A17DN8 | DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
P | 2 | -60 | - | - | - | 190 | 125 | -3.2 | 1.25 |
SOIC-8 |
| Si5943DU | Dual P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 12 | 98 | - | 73 | 53 | - | 6 | 8.3 |
PowerPAK_ChipFET |
| FDJ1028N | N-Channel 2.5 Vgs Specified PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 70 | - | 3.2 | 1.5 |
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| IRF8915 | HEXFET Power MOSFETs Dual N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 2 | 20 | - | - | - | 27 | 18.3 | 8.9 | 2 |
SOIC-8 |
| DMP2160UFDB | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 2 | -20 | 86 | - | - | 54 | - | -3.8 | 1.4 |
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| Si1905BDH | Dual P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 8 | 950 | - | 655 | 450 | - | 0.63 | 0.357 |
SC70-6 |
| ZXMN3A04DN8 | DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
N | 2 | 30 | - | - | - | 30 | 20 | 8.5 | 2.15 |
SOIC-8 |
| IRF7756GPBF | HEXFET Power MOSFETs Dual P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 2 | 12 | - | - | 58 | 40 | - | 4.3 | 1 |
TSSOP-8 |
