Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| FDP2710 | 250V N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 250 | - | - | - | - | 36.3 | 50 | 260 |
TO-220 |
| ZVP4525G | 250V P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Zetex |
MOSFET |
P | 1 | -250 | - | - | - | - | 10000 | -0.265 | 2 |
SOT-223-4 |
| ZVP4525Z | 250V P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Zetex |
MOSFET |
P | 1 | -250 | - | - | - | - | 10000 | -0.205 | 1.2 |
SOT-89 |
| ZVP4525E6 | 250V P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Zetex |
MOSFET |
P | 1 | -250 | - | - | - | - | 10000 | -0.197 | 1.1 |
SOT-23-6 |
| IRLU8259PbF | 25V Single N-Channel HEXFET Power MOSFET |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 25 | - | - | - | 10.6 | 6.3 | 57 | 48 |
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| IRF8252PbF | 25V Single N-Channel HEXFET Power MOSFET |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 25 | - | - | - | 2.9 | 2 | 25 | 2.5 |
SOIC-8 |
| IRLR8259PbF | 25V Single N-Channel HEXFET Power MOSFET |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 25 | - | - | - | 10.6 | 6.3 | 57 | 48 |
D-PAK |
| IRLR8256PbF | 25V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 25 | - | - | - | 6.7 | 4.2 | 81 | 63 |
D-PAK |
| IRLU8256PbF | 25V Single N-Channel HEXFET Power MOSFET in a I-Pak package |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 25 | - | - | - | 6.7 | 4.2 | 81 | 63 |
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| HUF76419P3 | 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | 44 | 35 | 27 | 75 |
TO-220AB |
| HUF76419S3S | 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | 44 | 35 | 27 | 75 |
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| FDA62N28 | 280V N-Channel MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 280 | - | - | - | - | 43 | 62 | 500 |
TO-3PN |
| FDA75N28 | 280V N-Channel MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 280 | - | - | - | - | 35 | 75 | 520 |
TO-3PN |
| Si6410DQ | 30-V (D-S) Dual |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 15 | 11 | 7.8 | 1.5 |
TSSOP-8 |
| Si6928DQ | 30-V (D-S) Dual |
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Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 38 | 27 | 4 | 1 |
TSSOP-8 |
| Si4953ADY | 30-V (D-S) Dual |
|
Vishay |
MOSFET |
P | 2 | 30 | - | - | - | 75 | 45 | 3.7 | 1.1 |
SOIC-8 |
| Si3454ADV | 30-V (D-S) Single |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 70 | 48 | 3.4 | 1.14 |
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| Si6415DQ | 30-V (D-S) Single |
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Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 22 | 15 | 6.5 | 1.5 |
TSSOP-8 |
| Si6435ADQ | 30-V (D-S) Single |
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Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 42 | 24 | 4.7 | 1.05 |
TSSOP-8 |
| FQPF9N30 | 300V N-Channel MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 300 | - | - | - | - | 350 | 6 | 42 |
TO-220F |
