Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| PMR780SN | N-channel uTrenchmos (tm) standard level FET |
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NXP |
MOSFET |
N | 1 | 60 | - | - | - | 1100 | 780 | 0.55 | 0.53 |
SC75A |
| IRLML2803 | Транзистор с логическим уровнем управления |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 400 | 250 | 1.2 | 0.54 |
SOT-23-3 |
| IRLML5103 | HEXFET Power MOSFETs Discrete P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 1000 | 600 | 0.76 | 0.54 |
SOT-23-3 |
| IRLML6302 | HEXFET Power MOSFETs Discrete P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 900 | 600 | - | 0.78 | 0.54 |
SOT-23-3 |
| IRLML2803 | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 400 | 250 | 1.2 | 0.54 |
SOT-23-3 |
| IRLML2402 | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | 350 | 250 | - | 1.2 | 0.54 |
SOT-23-3 |
| DMP2004K | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
P | 1 | -20 | 1700 | - | - | 700 | - | -6.6 | 0.55 |
SOT-23-3 |
| PMF780SN | N-channel uTrenchmos (tm) standard level FET |
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NXP |
MOSFET |
N | 1 | 60 | - | - | - | 1100 | 780 | 0.57 | 0.56 |
SOT-323 |
| PMF3800SN | N-channel TrenchMOS standard level FET |
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NXP |
MOSFET |
N | 1 | 60 | - | - | - | 3.8 | 2.8 | 260 | 0.56 |
SOT-323 |
| Si1400DL | N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 20 | - | - | 195 | 123 | 5 | 1.6 | 0.568 |
SC70-6 |
| Si1403BDL | P-Channel 2.5-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | - | - | 220 | 120 | - | 1.4 | 0.568 |
SC70-6 |
| Si1913EDH | P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 20 | 850 | - | 610 | 400 | - | 0.88 | 0.57 |
SC70-6 |
| Si1917EDH | P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 12 | 660 | - | 470 | 300 | - | 1 | 0.57 |
SC70-6 |
| Si1913DH | Dual P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 850 | - | 610 | 400 | - | 0.88 | 0.57 |
SC70-6 |
| Si1912EDH | N-Channel 20-V (D-S) MOSFET with Copper Leadframe |
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Vishay |
MOSFET |
N | 2 | 20 | 344 | - | 281 | 220 | - | 1.13 | 0.57 |
SC70-6 |
| Si1902DL | N-Channel 20-V (D-S) MOSFET with Copper Leadframe |
|
Vishay |
MOSFET |
N | 2 | 20 | 344 | - | 281 | 220 | - | 1.13 | 0.57 |
SC70-6 |
| DMN2230U | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 1 | 20 | 170 | - | - | 81 | - | 2 | 0.6 |
SOT-23-3 |
| DMN2170U | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 1 | 20 | - | - | - | 50 | - | 2.3 | 0.6 |
SOT-23-3 |
| DMP2240UDM | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
P | 2 | -20 | 180 | - | - | 92 | - | -2 | 0.6 |
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| DMN3300U | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 1 | 30 | 185 | - | - | 100 | - | 2 | 0.6 |
SOT-23-3 |
