Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| STF7NM50N | N-channel 500V - 0.70? - 5A - TO-220FP Second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 700 | 5 | 20 |
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| FQU13N06L | 60V LOGIC N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 92 | 11 | 28 |
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| SQJ844EP | Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET |
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Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 37 | 24 | 30 | 48 |
PowerPAK_SO-8 |
| Si7170DP | N-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 3.6 | 2.7 | 40 | 48 |
PowerPAK_SO-8 |
| PHB110NQ06LT | N-channel Trenchmos (tm) logic level FET |
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NXP |
MOSFET |
N | 1 | 55 | - | - | - | 7.1 | 6.2 | 75 | 200 |
D2-PAK |
| BSC042NE7NS3 | Силовой MOSFET-транзистор серии OptiMOS™3, 75 В, 100 А, 4.2 мОм |
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Infineon Technologies |
MOSFET |
N | 1 | 75 | - | - | - | - | 4.2 | 100 | 125 |
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| FQD9N25 | 250V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 250 | - | - | - | - | 330 | 7.4 | 55 |
D-PAK |
| IRF1310NL | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 36 | 42 | 160 |
TO-262 |
| STD1LNK60Z | N-channel 600V - 13? - 0.8A - IPAK Zener-Protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 13000 | 0.8 | 25 |
D-PAK |
| FDMC86139P | P-канальный MOSFET-транзистор с напряжением сток-исток -100 В, выполненный по технологии PowerTrench® |
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Fairchild Semiconductor |
MOSFET |
P | 1 | -100 | - | - | - | - | 67 | -15 | 40 |
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| PH2525L | N-channel TrenchMOS logic level FET |
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NXP |
MOSFET |
N | 1 | 25 | - | - | - | 2.6 | 1.8 | 100 | 62.5 |
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| SiE812DF | N-Channel 40-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 40 | - | - | - | 2.8 | 2.2 | 60 | 125 |
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| STD4NK60Z | N-channel 600 V - 1.76 ? - 4 A SuperMESH™ Power MOSFET DPAK - IPAK |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 176 | 4 | 70 |
D-PAK |
| FDS6892A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 13 | - | 7.5 | 1.6 |
SOIC-8 |
| FDMS7660 | N-канальный MOSFET-транзистор PowerTrench® 30 В, 42 А, 2.8 мОм |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 2.7 | 1.9 | 144 | 78 |
Power 56 |
| IRF6215L | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 150 | - | - | - | - | 290 | 13 | 110 |
TO-262 |
| NTMFS4744N | Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL |
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ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 10.4 | 7.6 | 11 | 2.2 |
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| IRFPS29N60LPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 175 | 29 | 480 |
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| STP75NF20 | N-channel 200V - 0.028? - 75A - TO-220 low gate charge STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 200 | - | - | - | - | 28 | 75 | 300 |
TO-220 |
| FQPF9N90C | 900V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 1120 | 8 | 68 |
TO-220F |
