Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| 2N7228U | N-CHANNEL MOSFET |
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Microsemi |
MOSFET |
N | 1 | 500 | - | - | - | - | 415 | 12 | 150 |
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| STW20NM60 | N-channel 600V - 0.25? - 20A - TO-247 MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 250 | 20 | 192 |
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| IRFP32N50K | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 135 | 32 | 460 |
TO-247AC |
| STP11NM80 | N-channel 800 V - 0.35 ? - 11 A - TO-220 MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 800 | - | - | - | - | 350 | 11 | 150 |
TO-220 |
| IRFZ44ZL | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | - | 13.9 | 51 | 80 |
TO-262 |
| STW80NF06 | N-channel 60V - 0.0065? - 80A TO-247 STripFETTM II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 60 | - | - | - | - | 6.5 | 80 | 300 |
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| IRF737LC | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 300 | - | - | - | - | 750 | 6.1 | 74 |
TO-220AB |
| STP19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - TO-220 second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 150 |
TO-220 |
| IRFB4229PBF | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 250 | - | - | - | - | 46 | 46 | 330 |
TO-220AB |
| MTP3055V | N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 150 | 12 | 48 |
TO-220 |
| STP90NS04ZC | N-channel clamped 5m? - 80A TO-220 Fully protected SAFeFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 33 | - | - | - | - | 5 | 80 | 280 |
TO-220 |
| STH150N10F7-2 | N-канальный силовой транзистор MOSFET семейства STripFET™ VII DeepGATE™, 100 В, 90 А |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 4.5 | 90 | 250 |
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| FQPF85N06 | 60V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 8 | 53 | 62 |
TO-220F |
| NDF10N62Z | N-канальный силовой MOSFET 10 А, 620 В, 0.65 Ом |
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ON Semiconductor |
MOSFET |
N | 1 | 620 | - | - | - | - | 650 | 10 | 36 |
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| STP19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - TO-220 second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 150 |
TO-220 |
| STW14NM50FD | N-channel 500V - 0.32? - 12A - TO-247 FDmesh™ Power MOSFET (with fast diode) |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 320 | 14 | 160 |
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| IRF2804L | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 2.3 | 280 | 330 |
TO-262 |
| NCV8402 | Защищенные MOSFET-транзисторы для управления вторичными цепями |
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ON Semiconductor |
MOSFET |
N | 1 | 42 | - | - | - | - | 165 | 2 | 8.9 |
SOT-223-4 |
| STF33N65M2 | N-канальные силовые MOSFET-транзисторы семейства MDmesh M2 на 650 В, 24 А |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 140 | 24 | 34 |
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| FQP33N10L | 100V LOGIC N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 39 | 33 | 127 |
TO-220 |
