Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRFR9120PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 600 | 5.6 | 42 |
D-PAK |
| IRFU9024N | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 55 | - | - | - | - | 175 | 11 | 38 |
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| STP25NM50N | N-channel 500V - 0.11? - 22A - TO-220 Second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 110 | 22 | 160 |
TO-220 |
| STF21N65M5 | N-channel 650 V, 0.159 ?, 17 A MDmesh™ V Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 710 | - | - | - | - | 159 | 17 | 30 |
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| FQPF33N10 | 100V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 40 | 18 | 41 |
TO-220F |
| IRFPC40 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 1200 | 6.8 | 150 |
TO-247AC |
| STP16NM50N | N-channel 500 V - 0.21 ? - 15 A MDmesh™ II Power MOSFET TO-220 |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 210 | 15 | 125 |
TO-220 |
| IRF3315 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 70 | 21 | 94 |
TO-220AB |
| PHD34NQ10T | N-канальный TrenchMOS™ транзистор |
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NXP |
MOSFET |
N | 1 | 100 | - | - | - | - | 35 | 35 | 136 |
D-PAK |
| HUF75631P3 | N-Channel, UltraFET Power MOSFETs |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 33 | 33 | 120 |
TO-220AB |
| FCPF4300N80Z | N-канальный MOSFET-транзистор семейства SuperFET® II, 800 В, 1.6 А |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 800 | - | - | - | - | 0.0043 | 1.6 | 19.2 |
TO-220F |
| SUM45N25-58 | N-Channel 250-V (D-S) 175°C MOSFET |
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Vishay |
MOSFET |
N | 1 | 250 | - | - | - | - | 47 | 45 | 375 |
D2-PAK |
| IPW50R280CE | 500В силовой транзистор серии CoolMOS™ CE |
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Infineon Technologies |
MOSFET |
N | 1 | 500 | - | - | - | - | 280 | 42.9 | 92 |
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| STF3N62K3 | N-channel 620 V, 2.2 ? , 2.7 A SuperMESH3™ Power MOSFET TO-220FP |
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STMicroelectronics |
MOSFET |
N | 1 | 620 | - | - | - | - | 2200 | 2.7 | 20 |
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| IPD60R520C6 | 600V CoolMOS™ C6 Power Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 600 | - | - | - | - | 470 | 8.1 | 66 |
TO-252 |
| RFD16N05LSM | Logic Level, N-Channel Power MOSFETs |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 50 | - | - | - | - | 47 | 16 | 60 |
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| IRFZ48RPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 60 | - | - | - | - | 18 | 50 | 190 |
TO-220AB |
| NID6002N | Self?Protected FET with Temperature and Current Limit 65 V, 6.5 A, Single N?Channel, DPAK |
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ON Semiconductor |
MOSFET |
N | 1 | 65 | - | - | - | - | 185 | 6.5 | 1.3 |
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| STD20NF20 | N-channel 200V - 0.10? -18A- DPAK Low gate charge STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 200 | - | - | - | - | 100 | 18 | 90 |
D-PAK |
| ZVP4105A | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
P | 1 | -50 | - | - | - | - | 10000 | -0.175 | 0.625 |
TO-92 |
