Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
| STW10NK60Z | N-channel 650 V, 0.65 ?, 10 A, SuperMESH™ Power MOSFET Zener-protected TO-247 |
|
STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 650 | 10 | 156 |
|
| FQPF6N60 | 600V N-Channel MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 1200 | 3.6 | 44 |
TO-220F |
| IRF8010L | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 15 | 80 | 260 |
TO-262 |
| STB200NF04L | N-CHANNEL 40V - 3 m? - 120 A D?PAK/I?PAK STripFET™ II MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 40 | - | - | - | - | 3.8 | 120 | 300 |
D2-PAK |
| STP7NM50N | N-channel 500V - 0.70? - 5A - TO-220 Second generation MDmesh™ Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 700 | 5 | 45 |
TO-220 |
| FQD13N06L | 60V LOGIC N-Channel MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 92 | 11 | 28 |
D-PAK |
| STN1HNK60 | N-CHANNEL 600V - 8? - 1A SOT-223 SuperMESH™ MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 8000 | 0.4 | 3.3 |
SOT-223-4 |
| BSC031N06NS3 | Силовой MOSFET-транзистор серии OptiMOS™3, 60 В, 100 А, 3.1 мОм |
|
Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 3.1 | 100 | 139 |
|
| FQA70N15 | N-Channel Power MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 150 | - | - | - | - | 23 | 70 | 330 |
TO-3PN |
| IPT059N15N3 | NOSFET-транзистор семейства OptiMOS™ в безвыводном корпусе TO, 150В, 155А |
|
Infineon Technologies |
MOSFET |
N | 1 | 150 | - | - | - | - | 5.9 | 155 | 375 |
|
| IRF1310N | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 36 | 42 | 160 |
TO-220AB |
| STB4NK60Z | N-channel 600 V - 1.76 ? - 4 A SuperMESH™ Power MOSFET D2PAK - I2PAK |
|
STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 176 | 4 | 70 |
D2-PAK |
| FDPF16N50 | 500V N-Channel MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 310 | 16 | 38.5 |
TO-220F |
| IRF6217 | HEXFET Power MOSFETs Discrete P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 1 | 150 | - | - | - | - | 24000 | 0.7 | 2.5 |
SOIC-8 |
| IRFPS29N60L | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 175 | 29 | 480 |
|
| MTP20N15E | Power MOSFET 20 Amps, 150 Volts N–Channel TO–220 |
|
ON Semiconductor |
MOSFET |
N | 1 | 150 | - | - | - | - | 130 | 20 | 12 |
TO-220AB |
| FQP9N90C | 900V N-Channel MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 1120 | 8 | 205 |
TO-220 |
| STB75NF20 | N-channel 200V - 0.028? - 75A - D2PAK low gate charge STripFET™ Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 200 | - | - | - | - | 28 | 75 | 300 |
D2-PAK |
| IRFBC20LPBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 4400 | 2.2 | 50 |
TO-262 |
| STI30NM60ND | N-channel 600 V, 0.11 ?, 25 A FDmesh™ II Power MOSFET(with fast diode) I2PAK |
|
STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 110 | 25 | 190 |
|
