Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| FDMC4435BZ | P-канальный MOSFET-транзистор PowerTrench® -30 В, 18 А, 20 мОм |
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Fairchild Semiconductor |
MOSFET |
P | 1 | 30 | - | - | - | 37 | 20 | 18 | 31 |
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| IRF9530NS | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 100 | - | - | - | - | 200 | 14 | 3.8 |
D2-PAK |
| IRFI9520GPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 600 | 5.2 | 37 |
TO-220F |
| Si1913DH | Dual P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 850 | - | 610 | 400 | - | 0.88 | 0.57 |
SC70-6 |
| ZXMP3A17E6 | 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
P | 1 | -30 | - | - | - | 110 | 70 | -4 | 1.1 |
SOT-23-6 |
| Si3471CDV | P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | 35 | - | 27 | 21 | - | 8 | 3.8 |
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| IXTK170P10P | Силовой P-канальный MOSFET-транзистор |
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IXYS |
MOSFET |
P | 1 | -100 | 12 | 12 | 12 | 12 | 12 | -170 | 890 |
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| Si7465DP | P-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 60 | - | - | - | 64 | 51 | 3.2 | 1.5 |
PowerPAK_SO-8 |
| TSM9434DCS | Сдвоенный P-канальный MOSFET транзистор, -20 В, -6.4 А |
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Taiwan Semiconductor |
MOSFET |
P | 2 | -20 | - | 60 | - | 40 | - | -6.4 | 2.5 |
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| Si6459BDQ | P-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 60 | - | - | - | 120 | 92 | 2.2 | 1 |
TSSOP-8 |
| IRFR5410 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 100 | - | - | - | - | 205 | 13 | 66 |
D-PAK |
| IRF9610S | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 3000 | 1.8 | 20 |
D2-PAK |
| NTGS3443B | Power MOSFET -20 V, -4.2 A, Single P-Channel, TSOP-6 |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | 65 | 45 | - | -3.7 | 1.25 |
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| Si8407DB | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 33 | - | 26 | 22 | - | 5.8 | 1.47 |
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| IRF5805 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 165 | 98 | 3.8 | 2 |
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| IRFL9110PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 1200 | 1.1 | 3.1 |
SOT-223-4 |
| DMP2160UW | P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | 120 | - | - | 75 | - | -1.5 | 0.35 |
SOT-323 |
| Si9933BDY | Dual P-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | - | - | 8 | 48 | - | 3.6 | 1.1 |
SOIC-8 |
| IXTH10P50 | Силовой P-канальный MOSFET-транзистор |
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IXYS |
MOSFET |
P | 1 | -500 | 750 | 750 | 750 | 750 | 750 | -11 | 300 |
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| IXTH10P50P | Силовой P-канальный MOSFET-транзистор |
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IXYS |
MOSFET |
P | 1 | -500 | 1000 | 1000 | 1000 | 1000 | 1000 | -10 | 300 |
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