Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
DMP2160U | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -20 | 92 | - | - | 60 | - | -3.2 | 1.4 |
SOT-23-3 |
|
TSM2307CX | P-канальный MOSFET транзистор, -30 В, -3 А | Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 140 | 95 | -3 | 1.25 |
SOT-23-3 |
|
NTHD5903 | Power MOSFET ?20 V, ?3.0 A, Dual P?Channel ChipFET | ON Semiconductor |
MOSFET |
P | 2 | -20 | - | - | - | 130 | - | -3 | 2.1 |
ChipFET_1206-8 |
|
CSD75204W15 | Сдвоенный P-канальный силовой MOSFET NexFET™ с общим истоком | Texas Instruments |
MOSFET |
P | 2 | -20 | 140 | - | - | 80 | - | -3 | 0.7 |
|
|
ZXMP6A17E6 | 60V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 1 | -60 | - | - | - | 190 | 125 | -3 | 1.1 |
SOT-23-6 |
|
NTGS3441B | Power MOSFET -20 V, -3.5 A, Single P-Channel, TSOP-6 | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 59 | - | -3 | 1.1 |
|
|
DMP2130L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | 87 | 51 | - | -3 | 1.4 |
SOT-23-3 |
|
DMP2123L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | 87 | 51 | - | -3 | 1.4 |
SOT-23-3 |
|
TSM3401CX | P-канальный MOSFET транзистор, -30 В, -3 А | Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 90 | 60 | -3 | 1.25 |
SOT-23-3 |
|
NTHD4102P | Power MOSFET ?20 V, ?4.1 A, Dual P?Channel ChipFET | ON Semiconductor |
MOSFET |
P | 2 | -20 | 120 | - | - | 64 | - | -2.9 | 1.1 |
ChipFET_1206-8 |
|
TSM2301CX | P-канальный MOSFET транзистор, -20 В, -2.8 А | Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | - | 190 | - | 130 | - | -2.8 | 0.9 |
SOT-23-3 |
|
TSM2301BCX | P-канальный MOSFET транзистор, -20 В, -2.8 А | Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | 190 | 150 | - | 100 | - | -2.8 | 0.9 |
SOT-23-3 |
|
TSM2301ACX | P-канальный MOSFET транзистор, -20 В, -2.8 А | Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | - | 190 | - | 130 | - | -2.8 | 0.7 |
SOT-23-3 |
|
DMP3120L | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 120 | - | -2.8 | 1.4 |
SOT-23-3 |
|
DMP2215L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 80 | - | -2.7 | 1.08 |
SOT-23-3 |
|
NTJS3151P | Trench Power MOSFET 12 V, 3.3 A, Single P?Channel, ESD Protected SC?88 | ON Semiconductor |
MOSFET |
P | 1 | -12 | 133 | - | - | 45 | - | -2.7 | 0.625 |
|
|
DMP3160L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 165 | 97 | -2.7 | 1.08 |
SOT-23-3 |
|
DMP3100L | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 147 | 86 | -2.7 | 1.08 |
SOT-23-3 |
|
DMP2225L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 80 | - | -2.6 | 1.08 |
SOT-23-3 |
|
NTF2955 | Power MOSFET ?60 V, ?2.6 A, Single P?Channel SOT?223 | ON Semiconductor |
MOSFET |
P | 1 | -60 | - | - | - | - | 145 | -2.6 | 2.3 |
SOT-223-4 |