Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| NTS4173P | Power MOSFET ?30 V, ?1.3 A, Single P?Channel, SC?70 |
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ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 110 | 90 | -1.2 | 0.29 |
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| NTS2101P | Power MOSFET ?8.0 V, ?1.4 A, Single P?Channel, SC?70 |
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ON Semiconductor |
MOSFET |
P | 1 | -8 | 117 | - | - | 65 | - | -1.4 | 0.29 |
SOT-23-3 |
| Si1305EDL | P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 8 | 440 | - | 315 | 230 | - | 0.86 | 0.29 |
SC70-3 |
| Si1305DL | P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 8 | 440 | - | 315 | 230 | - | 0.86 | 0.29 |
SC70-3 |
| Si1307EDL | P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | 480 | - | 350 | 240 | - | 0.85 | 0.29 |
SC70-3 |
| Si1303EDL | P-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 560 | 360 | - | 0.67 | 0.29 |
SC70-3 |
| Si1303DL | P-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 560 | 360 | - | 0.67 | 0.29 |
SC70-3 |
| 2N7002W | Small Signal MOSFET 60 V, 340 mA, Single, N?Channel, SC?70 |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | 1330 | 1190 | 0.31 | 0.28 |
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| Si1302DL | N-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 600 | 410 | 0.6 | 0.28 |
SC70-3 |
| Si1330EDL | N-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 60 | - | - | - | 1400 | 1000 | 0.24 | 0.28 |
SC70-3 |
| NTS4409N | Small Signal MOSFET 25 V, 0.75 A, Single, N?Channel, ESD Protection, SC?70/SOT?323 |
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ON Semiconductor |
MOSFET |
N | 1 | 25 | - | - | 299 | 249 | - | 0.7 | 0.28 |
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| DMN32D2LDF | COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 2 | 30 | 2200 | - | - | - | - | 0.4 | 0.28 |
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| NTJD4152P | Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | 600 | - | - | 215 | - | -0.88 | 0.272 |
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| Si1902DL | Dual N-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | - | - | 560 | 320 | - | 0.6 | 0.27 |
SC70-6 |
| Si1539DL | Complementary 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N+P | 2 | 30 | - | - | - | 1.5 | 800 | 0.42 | 0.27 |
SC70-6 |
| Si1553DL | Complementary 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | - | - | 1.4 | 850 | - | 0.41 | 0.27 |
SC70-6 |
| Si1903DL | Dual P-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | - | - | 1400 | 850 | - | 0.41 | 0.27 |
SC70-6 |
| NTJD2152P | Trench Small Signal MOSFET 8 V, Dual P?Channel, SC?88 ESD Protection |
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ON Semiconductor |
MOSFET |
P | 2 | -8 | 510 | - | - | 220 | - | -0.775 | 0.27 |
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| DMP2004WK | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | 1700 | - | - | 700 | - | -0.4 | 0.25 |
SOT-323 |
| DMN66D0LDW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 2 | 60 | - | - | - | - | 3000 | 0.8 | 0.25 |
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