Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| FDS8817NZ | N-Channel PowerTrench MOSFET 30V, 15A, 7.0m? |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 7 | 5.4 | 15 | 2.5 |
SOIC-8 |
| FDN339AN | N-Channel 2.5V Specified PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 20 | - | - | - | - | 29 | 3 | 0.5 |
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| FQD17P06 | 60V P-Channel QFET® MOSFET |
|
Fairchild Semiconductor |
MOSFET |
P | 1 | -60 | - | - | - | - | 135 | -12 | 44 |
D-PAK |
| FQPF90N10V2 | 100V N-Channel MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 8.5 | 90 | 83 |
TO-220F |
| FQB5N50C | 500V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 1140 | 5 | 73 |
D2-PAK |
| FDMS8680 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 8.5 | 5.5 | 35 | 50 |
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| FDMC86261P | P-канальный MOSFET-транзистор с напряжением сток-исток -150 В, выполненный по технологии PowerTrench® |
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Fairchild Semiconductor |
MOSFET |
P | 1 | -150 | - | - | - | - | 160 | -9 | 40 |
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| HUFA76407D3 | N-Channel, Logic Level UltraFET Power MOSFETs |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | 107 | 77 | 12 | 38 |
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| FDS8880 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 9.6 | 7.9 | 11.6 | 2.5 |
SOIC-8 |
| FQI19N20L | 200V LOGIC N-Channel MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 110 | 21 | 140 |
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| 2N7002W | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 13500 | 0.115 | 0.2 |
SOT-323 |
| DMP2066LSD | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Diodes Incorporated |
MOSFET |
P | 2 | -20 | - | - | - | 29 | - | -5.8 | 2 |
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| DMN3052L | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 33 | 26 | 5.4 | 1.4 |
SOT-23-3 |
| VN10LP | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 5000 | 0.27 | 0.625 |
TO-92 |
| DMP3098L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 98 | 56 | -3.8 | 1.8 |
SOT-23-3 |
| DMN2104L | N-CHANNEL ENHANCEMENT MODE MOSFET |
|
Diodes Incorporated |
MOSFET |
N | 1 | 20 | - | - | - | 42 | - | 4.3 | 1.4 |
SOT-23-3 |
| DMN55D0UT | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 1 | 50 | - | - | - | - | - | 0.16 | 0.2 |
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| DMP2160U | P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Diodes Incorporated |
MOSFET |
P | 1 | -20 | 92 | - | - | 60 | - | -3.2 | 1.4 |
SOT-23-3 |
| DMN32D2LV | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 1 | 30 | 2200 | - | - | - | - | 0.4 | 0.4 |
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| DMP3120L | P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 120 | - | -2.8 | 1.4 |
SOT-23-3 |
