Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| SPD07N20-G | SIPMOS™ Power-Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 200 | - | - | - | - | 300 | 7 | 40 |
TO-252 |
| STP30NM60ND | N-channel 600 V, 0.11 ?, 25 A FDmesh™ II Power MOSFET(with fast diode) TO-220 |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 110 | 25 | 190 |
TO-220 |
| TSM8N50CP | N-канальный MOSFET транзистор, 500 В, 7.2 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 850 | 7.2 | 89 |
TO-252 |
| STF23NM60N | N-channel 600 V - 0.150 ? - 19 A - TO-220FP, second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 150 | 19 | 35 |
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| STL60N10F7 | N-канальный силовой транзистор MOSFET семейства STripFET™ VII DeepGATE™, 100 В, 12 А |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 16.5 | 12 | 5 |
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| IRF7494 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 44 | 5.2 | 3 |
SOIC-8 |
| FQP8N90C | 900V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 1600 | 6.3 | 171 |
TO-220 |
| IRFR9210PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 3000 | 1.9 | 25 |
D-PAK |
| IRFU5505 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 55 | - | - | - | - | 110 | 18 | 57 |
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| FDD6N50 | 500V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 760 | 6 | 89 |
D-PAK |
| STP21N65M5 | N-channel 650 V, 0.159 ?, 17 A MDmesh™ V Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 710 | - | - | - | - | 159 | 17 | 125 |
TO-220 |
| STF25NM50N | N-channel 500V - 0.11? - 22A - TO-220FP Second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 110 | 22 | 40 |
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| IRFPC50 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 600 | 11 | 180 |
TO-247AC |
| STP9NK70Z | N-CHANNEL 700V - 1W - 7.5A TO-220 Zener-Protected SuperMESH™Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 700 | - | - | - | - | 1000 | 7.5 | 115 |
TO-220 |
| ZVN4210G | SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
N | 1 | 100 | - | - | - | - | 1500 | 0.8 | 2 |
SOT-223-4 |
| STP120NF10 | N-channel 100V - 0.009? - 110A - TO-220 STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 9 | 110 | 312 |
TO-220 |
| IRF840APBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 850 | 8 | 125 |
TO-220AB |
| STB24NM65N | N-channel 650 V - 0.16 ? - 19 A - D2PAK second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 160 | 19 | 160 |
D2-PAK |
| IRFIZ46N | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | - | 20 | 33 | 40 |
TO-220 |
| FDA75N28 | 280V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 280 | - | - | - | - | 35 | 75 | 520 |
TO-3PN |
