Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| BSS123 | N-канальный TrenchMOS транзистор с логическим уровнем FET |
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NXP |
MOSFET |
N | 1 | 100 | - | - | - | - | 3500 | 0.15 | 0.25 |
SOT-23-3 |
| DMN601VK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 2 | 60 | - | - | - | 3000 | 2000 | 0.305 | 0.25 |
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| DMP2004DWK | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 2 | -20 | 1700 | - | - | 700 | - | -0.43 | 0.25 |
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| 2N7002VA | N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 60 | - | - | - | 1600 | - | 0.28 | 0.25 |
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| 2N7002V | N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 60 | - | - | - | 1600 | - | 0.28 | 0.25 |
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| DMN5L06WK | N-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
N | 1 | 50 | 3000 | - | - | - | - | 0.3 | 0.25 |
SOT-323 |
| Si1033X | P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 15000 | - | 12000 | 8000 | - | 0.15 | 0.25 |
SC89-6 |
| Si1023X | Dual P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 1800 | - | 1200 | 800 | - | 0.37 | 0.25 |
SC89-6 |
| Si1034X | N-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | 9000 | - | 7000 | 5000 | - | 0.18 | 0.25 |
SC89-6 |
| Si1013X | P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 1800 | - | 1200 | 800 | - | 0.35 | 0.25 |
SC89-3 |
| Si1046X | N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 20 | 440 | - | 440 | 340 | - | 0.6 | 0.25 |
SC89-3 |
| DMN5L06DWK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 2 | 50 | 3000 | - | - | - | - | 0.305 | 0.25 |
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| Si1025X | P-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 60 | - | - | - | 8000 | 4000 | 0.19 | 0.25 |
SC89-6 |
| Si1021R | P-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 60 | - | - | - | 8000 | 4000 | 0.19 | 0.25 |
SC75A |
| Si1046R | N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 20 | 660 | - | 501 | 420 | - | 0.6 | 0.25 |
SC75A |
| NTZD5110N | Small Signal MOSFET 60 V, 310 mA, Dual N?Channel with ESD Protection, SOT?563 |
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ON Semiconductor |
MOSFET |
N | 2 | 60 | - | - | - | 1330 | 1190 | 0.294 | 0.25 |
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| Si1029X | Complementary N- and P-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
N+P | 2 | 60 | - | - | - | 3000 | 1300 | 0.3 | 0.25 |
SC89-6 |
| Si1024X | Dual N-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | 1250 | - | 850 | 700 | - | 0.5 | 0.25 |
SC89-6 |
| NTZD3154N | Small Signal MOSFET 20 V, 540 mA, Dual N?Channel |
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ON Semiconductor |
MOSFET |
N | 2 | 20 | 700 | - | - | 400 | - | 0.54 | 0.25 |
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| Si1026X | N-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 60 | - | - | - | 3000 | 1400 | 0.305 | 0.25 |
SC89-6 |
