Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
DMN55D0UT | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 50 | - | - | - | - | - | 0.16 | 0.2 |
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BSS138DW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 50 | - | - | - | - | 3500 | 0.2 | 0.2 |
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DMN2004WK | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 1 | 20 | 700 | - | - | 400 | - | 0.54 | 0.2 |
SOT-323 |
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2N7002 | N-Channel Enhancement Mode Field Effect Transistor | Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 1200 | 0.115 | 0.2 |
SOT-23-3 |
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2N7002W | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 13500 | 0.115 | 0.2 |
SOT-323 |
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DMN2004DWK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 20 | 700 | - | - | 400 | - | 0.54 | 0.2 |
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BSS123W | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 100 | - | - | - | 10000 | 6000 | 0.17 | 0.2 |
SOT-23-3 |
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2N7002DW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 60 | - | - | - | - | 4400 | 0.115 | 0.2 |
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DMN66D0LW | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 3000 | 0.115 | 0.2 |
SOT-323 |
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Si1039X | P-Channel 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 12 | 230 | - | 180 | 140 | - | 0.95 | 0.17 |
SC89-6 |
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DMP2104V | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 1 | -20 | 180 | - | - | 92 | - | -0.86 | 0.17 |
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DMP2004TK | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 1 | -20 | 1700 | - | - | 700 | - | -0.43 | 0.15 |
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DMN601TK | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 2000 | 0.3 | 0.15 |
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DMN5L06TK | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 50 | 1800 | - | - | - | - | 0.28 | 0.15 |
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BSS84V | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 2 | -50 | - | - | - | - | - | -0.13 | 0.15 |
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DMP22D6UT | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -20 | 1700 | - | - | 700 | - | -0.43 | 0.15 |
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Si1013R | P-Channel 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 1800 | - | 1200 | 800 | - | 0.35 | 0.15 |
SC75A |
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Si1012R | N-Channel 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
N | 1 | 20 | 1250 | - | 850 | 700 | - | 0.5 | 0.15 |
SC75A |
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DMN2004TK | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 1 | 20 | 700 | - | - | 400 | - | 0.54 | 0.15 |
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2N7002VAC | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 60 | - | - | - | - | 13500 | 0.28 | 0.15 |
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