Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IXTA2R4N120P | Стандартный N-канальный силовой MOSFET |
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IXYS |
MOSFET |
N | 1 | 1200 | 7500 | 7500 | 7500 | 7500 | 7500 | 2.4 | 125 |
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| ZVP2110G | SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
P | 1 | -100 | - | - | - | - | 8000 | -0.31 | 2 |
SOT-223-4 |
| STN1HNK60 | N-CHANNEL 600V - 8? - 1A SOT-223 SuperMESH™ MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 8000 | 0.4 | 3.3 |
SOT-223-4 |
| STQ1HNK60R | N-CHANNEL 600V - 8? - 1A TO-92 SuperMESH™ MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 8000 | 0.4 | 3 |
TO-92 |
| STD1NK60 | N-CHANNEL 600V - 8? - 1A DPAK/IPAK SuperMESH™ MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 8000 | 1 | 30 |
D-PAK |
| TN2540N8-G | N-Channel Enhancement-Mode Vertical DMOS FET |
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Supertex, Inc. |
MOSFET |
N | 1 | 400 | - | - | - | 8000 | 8000 | 0.75 | 1.6 |
SOT-89 |
| ZVP2110A | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
P | 1 | -100 | - | - | - | - | 8000 | -0.23 | 0.7 |
TO-92 |
| TN2540N3-G | N-Channel Enhancement-Mode Vertical DMOS FET |
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Supertex, Inc. |
MOSFET |
N | 1 | 400 | - | - | - | 8000 | 8000 | 0.75 | 0.74 |
TO-92 |
| STN1HNK60 | N-CHANNEL 600V - 8? - 1A SOT-223 SuperMESH™ MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 8000 | 0.4 | 3.3 |
SOT-223-4 |
| STQ1HNK60R | N-CHANNEL 600V - 8? - 1A TO-92 SuperMESH™ MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 8000 | 0.4 | 3 |
TO-92 |
| STD1NK60 | N-CHANNEL 600V - 8? - 1A DPAK/IPAK SuperMESH™ MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 8000 | 1 | 30 |
D-PAK |
| IRFBF20PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 900 | - | - | - | - | 8000 | 1.7 | 54 |
TO-220AB |
| IRFBF20LPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 900 | - | - | - | - | 8000 | 1.7 | 54 |
TO-262 |
| IRFBF20L | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 900 | - | - | - | - | 8000 | 1.7 | 54 |
TO-262 |
| IRFBF20 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 900 | - | - | - | - | 8000 | 1.7 | 54 |
TO-220AB |
| STS1HNK60 | N-CHANNEL 600V - 8W - 0.3A SO-8 SuperMESH™ POWER MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 8000 | 0.3 | 2 |
SOIC-8 |
| CPC5602 | N-канальный MOSFET транзистор с режимом истощения |
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Clare |
MOSFET |
N | 1 | 350 | 8000 | 8000 | 8000 | 8000 | 8000 | 0.13 | 1.6 |
SOT-223-4 |
| IRFIBF20GPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 900 | - | - | - | - | 8000 | 1.2 | 30 |
TO-220F |
| IRFIBF20G | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 900 | - | - | - | - | 8000 | 1.2 | 30 |
TO-220F |
| IXTN5N250 | Высоковольтный N-канальный силовой MOSFET |
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IXYS |
MOSFET |
N | 1 | 2500 | 8800 | 8800 | 8800 | 8800 | 8800 | 5 | 700 |
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