Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| STF30NM60ND | N-channel 600 V, 0.11 ?, 25 A FDmesh™ II Power MOSFET(with fast diode) TO-220FP |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 110 | 25 | 40 |
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| FDP5N50 | N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 1150 | 5 | 85 |
TO-220 |
| IRFP4310ZPBF | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 6 | 120 | 280 |
TO-247AC |
| STB120NF10 | N-channel 100V - 0.009? - 110A - D?PAK STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 9 | 110 | 312 |
D2-PAK |
| Si9407BDY | P-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 60 | - | - | - | 126 | 100 | 4.7 | 5 |
SOIC-8 |
| STW21NM60ND | N-channel 600 V, 0.17 ?, 17 A FDmesh™ II Power MOSFET TO-247 |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 170 | 17 | 140 |
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| FDP16AN08A0 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 70 | - | - | - | - | 13 | 58 | 135 |
TO-220AB |
| FCP190N65F | N-канальный MOSFET-транзистор семейства SuperFET® II, 650 В, 20.6 А |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 650 | - | - | - | - | 190 | 20.6 | 208 |
TO-220 |
| IRF3709ZCL | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 7.8 | 6.3 | 87 | 79 |
TO-262 |
| PSMN020-150W | N-канальный TrenchMOS™ транзистор |
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NXP |
MOSFET |
N | 1 | 150 | - | - | - | - | 12 | 73 | 300 |
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| Si7462DP | N-Channel 200-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 200 | - | - | - | - | 110 | 2.6 | 1.9 |
PowerPAK_SO-8 |
| IPD50N06S4-09 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 7.1 | 50 | 71 |
TO-252 |
| Si1902DL | N-Channel 20-V (D-S) MOSFET with Copper Leadframe |
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Vishay |
MOSFET |
N | 2 | 20 | 344 | - | 281 | 220 | - | 1.13 | 0.57 |
SC70-6 |
| STP8NM60FP | N-channel 650 V@Tjmax, 0.9 ?, 8 A MDmesh™ Power MOSFET TO-220FP |
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STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | - | 900 | 8 | 0 |
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| BSC014N06NS | Транзистор серии OptiMOS™ на 60 В, 100 А |
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Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 1.45 | 100 | 156 |
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| FQP11N40C | 400V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 400 | - | - | - | - | 430 | 10.5 | 135 |
TO-220 |
| IRLI620G | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 200 | - | - | - | - | 800 | 4 | 30 |
TO-220F |
| NTB75N06 | Power MOSFET 75 Amps, 60 Volts N-Channel D2PAK |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 8.2 | 75 | 214 |
D2-PAK |
| IRLR8726PbF | 30V Single N-Channel HEXFET Power MOSFET |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 5.8 | 4 | 86 | 75 |
D-PAK |
| IRLR8113 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 7.4 | 6 | 94 | 89 |
D-PAK |
