Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
| STP130NS04ZB | N-channel clamped - 7 m? - 80A TO-220 Fully protected mesh overlay™ MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 0 | - | - | - | - | 7 | 80 | 300 |
TO-220 |
| IRFB16N50KPBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 285 | 17 | 280 |
TO-220AB |
| STB15NM65NT4 | N-channel 650V - 0.25 Ом - 15.5A - D2PAK Second generation MDmesh™ Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 150 |
D2-PAK |
| STP16N65M5 | N-channel 650 V, 0.270 ?, 12 A MDmesh™ V Power MOSFET TO-220 |
|
STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 0.27 | 12 | 90 |
TO-220 |
| Si7108DN | N-Channel 20-V (D-S) Fast Switching MOSFET |
|
Vishay |
MOSFET |
N | 1 | 20 | - | - | - | 5 | 4.1 | 14 | 1.5 |
PowerPAK_1212-8 |
| IXFH21N50Q | N-канальный силовой MOSFET транзистор со встроенным быстрым диодом (HiPerFET) |
|
IXYS |
MOSFET |
N | 1 | 500 | 250 | 250 | 250 | 250 | 250 | 21 | 280 |
|
| IXFV110N25T | N-канальный силовой Trench Gate MOSFET транзистор |
|
IXYS |
MOSFET |
N | 1 | 250 | 24 | 24 | 24 | 24 | 24 | 110 | 694 |
|
| IPS80R1K4P7 | Силовой транзистор CoolMOS P7 с напряжением сток-исток 800 В |
|
Infineon Technologies |
MOSFET |
N | 1 | 800 | - | - | - | - | 1400 | 4 | 32 |
|
| IRFP4468PbF | 100V Single N-Channel HEXFET Power MOSFET in a TO-247AC |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | 2 | 2.6 | 195 | 520 |
TO-247AC |
| HUF75329D3S | N-Channel UltraFET Power MOSFETs |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 55 | - | - | - | - | 22 | 20 | 128 |
|
| IRF7822 | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 6.5 | - | 18 | 3.1 |
SOIC-8 |
| IRFS4115-7PPbF | 150V Single N-Channel HEXFET Power MOSFET |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 10 | 105 | 380 |
D2-PAK-7 |
| IXTA50N20P | Стандартный N-канальный силовой MOSFET |
|
IXYS |
MOSFET |
N | 1 | 200 | 60 | 60 | 60 | 60 | 60 | 50 | 360 |
|
| IXTZ550N055T2 | N-канальный силовой TrenchT2 MOSFET транзистор |
|
IXYS |
MOSFET |
N | 1 | 55 | 1 | 1 | 1 | 1 | 1 | 550 | 600 |
|
| PHT6N06T | TrenchMOS (tm) standard level FET |
|
NXP |
MOSFET |
N | 1 | 55 | - | - | - | - | 128 | 5.5 | 8.3 |
SOT-223-4 |
| STB80NF06 | N-channel 60V - 0.0065? - 80A D2PAK STripFETTM II Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 60 | - | - | - | - | 6.5 | 80 | 300 |
D2-PAK |
| STP5NK100Z | N-channel 1000V - 2.7? - 3.5A - TO-220 Zener-protected SuperMESH™ Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 1000 | - | - | - | - | 2700 | 3.5 | 125 |
TO-220 |
| IRL630A | Advanced Power MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | 400 | - | 9 | 69 |
TO-220 |
| IRFI840G | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 850 | 4.6 | 40 |
TO-220F |
| IXTH60N25 | Стандартный N-канальный силовой MOSFET |
|
IXYS |
MOSFET |
N | 1 | 250 | 46 | 46 | 46 | 46 | 46 | 60 | 400 |
|
