Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRL3713S | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 4 | 3 | 260 | 200 |
D2-PAK |
| NTP5411N | Power MOSFET 80 Amps, 60 Volts N-Channel TO-220 |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 8.4 | 80 | 166 |
TO-220AB |
| STP75NF20 | N-channel 200V - 0.028? - 75A - TO-220 low gate charge STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 200 | - | - | - | - | 28 | 75 | 300 |
TO-220 |
| IRFBC20PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 4400 | 2.2 | 50 |
TO-220AB |
| FQP6N50C | 500V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 1000 | 5.5 | 98 |
TO-220 |
| IRFP4232 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 250 | - | - | - | - | 30 | 60 | 430 |
TO-247AC |
| STP30NM60ND | N-channel 600 V, 0.11 ?, 25 A FDmesh™ II Power MOSFET(with fast diode) TO-220 |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 110 | 25 | 190 |
TO-220 |
| STW120NF10 | N-channel 100V - 0.009? - 110A - TO-247 STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 9 | 110 | 312 |
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| Si4409DY | P-Channel 150-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 150 | - | - | - | - | 95 | 1.3 | 4.6 |
SOIC-8 |
| FDS3601 | 100V Dual N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 100 | - | - | - | - | 350 | 1.3 | 1.6 |
SOIC-8 |
| FCH170N60 | N-канальный MOSFET-транзистор семейства SuperFET® II, 600 В, 22 А |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 170 | 22 | 227 |
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| IRF3709ZL | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 7.8 | 6.3 | 87 | 79 |
TO-262 |
| STI21NM60ND | N-channel 600 V, 0.17 ?, 17 A FDmesh™ II Power MOSFET I2PAK |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 170 | 17 | 140 |
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| PSMN015-100B | N-канальный TrenchMOS™ транзистор со стандартным уровнем FET |
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NXP |
MOSFET |
N | 1 | 100 | - | - | - | - | 12 | 75 | 300 |
D2-PAK |
| Si7898DP | N-Channel 150-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 150 | - | - | - | - | 68 | 3 | 1.9 |
PowerPAK_SO-8 |
| RFD14N05 | N-Channel Power MOSFETs |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 50 | - | - | - | - | 100 | 14 | 48 |
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| IPD90N06S4-05 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 4.2 | 90 | 107 |
TO-252 |
| Si1488DH | N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 20 | 54 | - | 47 | 41 | 15 | 6.1 | 2.8 |
SC70-6 |
| BSC028N06NS | Транзистор серии OptiMOS™ на 60 В, 100 А |
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Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 2.8 | 100 | 83 |
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| STB8NM60 | N-channel 650 V@Tjmax, 0.9 ?, 8 A MDmesh™ Power MOSFET D2PAK |
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STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | - | 900 | 8 | 100 |
D2-PAK |
