Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| NTHD4102P | Power MOSFET ?20 V, ?4.1 A, Dual P?Channel ChipFET |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | 120 | - | - | 64 | - | -2.9 | 1.1 |
ChipFET_1206-8 |
| ZXM64N02X | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
N | 1 | 20 | - | - | 50 | 40 | - | 5.4 | 1.8 |
MSOP-8 |
| Si6467BDQ | P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | 16 | - | 12.5 | 10 | - | 6.8 | 1.05 |
TSSOP-8 |
| EFC6601R | Сдвоенный N-канальный силовой MOSFET-транзистор на 24 В / 13 А / 11.5 мОм, для схем коммутации нагрузки в устройствах заряда/разряда Li-ion аккумуляторных батарей |
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ON Semiconductor |
MOSFET |
N | 2 | 24 | - | 17 | - | 11.5 | - | 13 | 2 |
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| IRF7530 | HEXFET Power MOSFETs Dual N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 2 | 20 | - | - | 45 | 30 | - | 5.4 | 1.3 |
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| Si4876DY | N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 20 | - | - | 5.8 | 3.7 | - | 14 | 1.6 |
SOIC-8 |
| DMN5L06TK | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 1 | 50 | 1800 | - | - | - | - | 0.28 | 0.15 |
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| IRF7476 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 12 | - | - | 30 | 8 | - | 15 | 2.5 |
SOIC-8 |
| Si1023X | Dual P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 1800 | - | 1200 | 800 | - | 0.37 | 0.25 |
SC89-6 |
| Si4226DY | Dual N-Channel 25-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 25 | - | - | 20 | 15.5 | - | 8 | 3.2 |
SOIC-8 |
| NTLJS3113P | Power MOSFET -20 V, -7.7 A, Cool Single P-Channel, 2x2 mm, WDFN Package |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | 67 | - | - | 32 | - | -5.8 | 1.9 |
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| IRF7504 | HEXFET Power MOSFETs Dual P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 400 | 270 | - | 1.7 | 1.25 |
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| NTB75N03L09 | Power MOSFET 75 Amps, 30 Volts N?Channel D2PAK |
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ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | - | - | 75 | 125 |
D2-PAK |
| DMN2215UDM | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 2 | 20 | 165 | - | - | 80 | - | 2 | 0.65 |
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| Si5855DC | P-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
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Vishay |
MOSFET |
P | 1 | 20 | 205 | - | 137 | 95 | - | 2.7 | 1.1 |
ChipFET_1206-8 |
| SiA414DJ | N-Channel 8-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 8 | 13 | - | 11 | 9 | - | 12 | 19 |
PowerPAK SC70-6 |
| Si2305DS | P-Channel 1.25-W, 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 8 | 87 | - | 60 | 44 | - | 3.5 | 1.25 |
SOT-23-3 |
| FDMC510P | P-канальный MOSFET-транзистор PowerTrench® -20 В, 18 А, 8.0 мОм |
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Fairchild Semiconductor |
MOSFET |
P | 1 | -20 | 13 | - | - | 8 | - | 18 | 41 |
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| BSH103 | N-channel enhancement mode MOS transistor |
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NXP |
MOSFET |
N | 1 | 30 | 600 | - | 500 | 400 | - | 0.85 | 0.75 |
SOT-23-3 |
| Si1034X | N-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | 9000 | - | 7000 | 5000 | - | 0.18 | 0.25 |
SC89-6 |
