Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| Si1046X | N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 20 | 440 | - | 440 | 340 | - | 0.6 | 0.25 |
SC89-3 |
| NTZS3151P | Small Signal MOSFET ?20 V, ?950 mA, P?Channel SOT?563 |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | 195 | - | - | 120 | - | -0.86 | -0.17 |
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| FQPF5N50C | 500V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | 1140 | - | 5 | 38 |
TO-220F |
| BSS84W | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
P | 1 | -50 | - | - | - | - | - | -0.13 | 0.2 |
SOT-323 |
| SiA411DJ | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 45 | - | 33 | 25 | - | 12 | 19 |
PowerPAK SC70-6 |
| SSM6J409TU | Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) |
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Toshiba |
MOSFET |
P | 1 | -20 | 46.5 | - | 30.2 | 22.1 | - | -9.5 | 1 |
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| Si1304BDL | N-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | 308 | 216 | - | 0.9 | 0.37 |
SC70-3 |
| ZXM62N02E6 | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
N | 1 | 20 | - | - | 125 | 100 | - | 3.2 | 1.7 |
SOT-23-6 |
| Si6463BDQ | P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 20 | - | 15 | 11 | - | 6.2 | 1.05 |
TSSOP-8 |
| TSM9434DCS | Сдвоенный P-канальный MOSFET транзистор, -20 В, -6.4 А |
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Taiwan Semiconductor |
MOSFET |
P | 2 | -20 | - | 60 | - | 40 | - | -6.4 | 2.5 |
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| Si8422DB | N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 20 | 35 | - | 33 | 31 | - | 7.3 | 2.77 |
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| Si4838DY | N-Channel 12-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 12 | - | - | 3.1 | 2.4 | - | 17 | 1.6 |
SOIC-8 |
| DMN5L06DWK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 2 | 50 | 3000 | - | - | - | - | 0.305 | 0.25 |
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| Si1031X | P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 15000 | - | 12000 | 8000 | - | 0.155 | 0.3 |
SC89-3 |
| NTLJD3115P | Power MOSFET ?20 V, ?4.1 A, Cool Dual P?Channel, 2x2 mm WDFN Package |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | 150 | - | - | 75 | - | -3.3 | 1.5 |
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| SiC779 | Интегральная схема DrMOS с рабочим током 40 А в конфигурации полу-мост |
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Vishay |
MOSFET Драйверы IGBT/MOSFET |
N | 1 | - | - | - | - | - | - | - | 25 | - |
| FDS4672A | 40V N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 40 | - | - | - | 10 | - | 11 | 2.5 |
SOIC-8 |
| IRF7555 | HEXFET Power MOSFETs Dual P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 105 | 55 | - | 4.3 | 1.25 |
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| NTB65N02R | Power MOSFET 65 A, 24 V N-Channel D2PAK |
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ON Semiconductor |
MOSFET |
N | 1 | 25 | - | - | - | - | - | 65 | 62.5 |
D2-PAK |
| DMN2114SN | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 1 | 20 | - | - | - | 100 | - | 1.2 | 0.5 |
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