Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| Si1472DH | N-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 65 | 46 | 5.6 | 2.8 |
SC70-6 |
| Si4618DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
|
Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 9.5 | 8.3 | 15.2 | 4.16 |
SOIC-8 |
| IRF9Z10 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 500 | 6.7 | 43 |
TO-220AB |
| IRL530S | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 100 | - | - | - | - | 160 | 15 | 88 |
D2-PAK |
| Si5481DU | P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | 33 | - | 24 | 18 | - | 12 | 17.8 |
PowerPAK_ChipFET |
| IRFI720G | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 1800 | 2.6 | 30 |
TO-220F |
| Si7806ADN | N-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 13 | 9 | 9 | 1.5 |
PowerPAK_1212-8 |
| IRCZ44 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 60 | - | - | - | - | 28 | 50 | 150 |
TO-220 |
| IRFR9210 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 3000 | 1.9 | 25 |
D-PAK |
| Si4845DY | P-Channel 20-V (D-S) MOSFET with Schottky Diode |
|
Vishay |
MOSFET |
P | 1 | 20 | - | - | 285 | 175 | - | 2.7 | 2.75 |
SOIC-8 |
| IRFP15N60L | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 385 | 15 | 280 |
TO-247AC |
| SUM110N06-04L | N-Channel 60-V (D-S) 175°C MOSFET |
|
Vishay |
MOSFET |
N | 1 | 60 | - | - | - | 4 | 2.8 | 110 | 437.5 |
D2-PAK |
| IRF730AL | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 1000 | 5.5 | 74 |
TO-262 |
| Si1032R | N-Channel 1.5-V (G-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 20 | 9000 | - | 7000 | 5000 | - | 0.2 | 0.3 |
SC75A |
| SUD45P03-10 | P-Channel Enhancement-Mode Transistor |
|
Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 18 | 10 | 15 | 70 |
D-PAK |
| IRFPC40 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 1200 | 6.8 | 150 |
TO-247AC |
| SUD17N25-165 | N-Channel 250-V (D-S) 175°C MOSFET |
|
Vishay |
MOSFET |
N | 1 | 250 | - | - | - | - | 131 | 17 | 136 |
D-PAK |
| IRFB20N50K | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 210 | 20 | 280 |
TO-220AB |
| Si8402DB | 20-V N-Channel 1.8-V (G-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 20 | 35 | - | 33 | 31 | - | 5.3 | 1.47 |
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| Si4833ADY | P-Channel 30-V (D-S) MOSFET with Schottky Diode |
|
Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 90 | 59 | 4.6 | 2.75 |
SOIC-8 |
