Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| TP0610K | P-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 60 | - | - | - | 10 | 6 | 0.185 | 0.35 |
SOT-23-3 |
| 2N7000 | Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 |
|
ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | 6000 | 5000 | 0.2 | 0.35 |
TO-92 |
| TP0101K | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
|
Vishay |
MOSFET |
P | 1 | 20 | - | - | 64 | 42 | - | 0.58 | 0.35 |
SOT-23-3 |
| DMP2160UW | P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Diodes Incorporated |
MOSFET |
P | 1 | -20 | 120 | - | - | 75 | - | -1.5 | 0.35 |
SOT-323 |
| FDV301N | Digital FET , N-Channel |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 25 | - | - | 3800 | 3100 | - | 0.22 | 0.35 |
SOT-23-3 |
| DMN2005K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 1 | 20 | 3500 | - | 1700 | - | - | 0.6 | 0.35 |
SOT-23-3 |
| DMN2004K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 1 | 20 | 700 | - | - | 400 | - | 0.54 | 0.35 |
SOT-23-3 |
| DMN3150LW | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 1 | 28 | - | - | - | 73 | - | 1.6 | 0.35 |
SOT-323 |
| 2N7002K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 2000 | 0.3 | 0.35 |
SOT-23-3 |
| TN0200K | N-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 20 | - | - | 250 | 200 | - | 0.73 | 0.35 |
SOT-23-3 |
| 2N7002K | N-Channel 60-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 60 | - | - | - | 4000 | 2000 | 0.3 | 0.35 |
SOT-23-3 |
| 2N7002E | N-Channel 60-V MOSFET |
|
Vishay |
MOSFET |
N | 1 | 60 | - | - | - | 1800 | 1200 | 0.24 | 0.35 |
SOT-23-3 |
| Si1905BDH | Dual P-Channel 1.8-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 8 | 950 | - | 655 | 450 | - | 0.63 | 0.357 |
SC70-6 |
| FDG8850NZ | Dual N-Channel PowerTrench MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 2 | 30 | - | - | 290 | 250 | - | 0.75 | 0.36 |
SC70-6 |
| 2N7002 | N-Channel Enhancement-Mode Vertical DMOS FET |
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Supertex, Inc. |
MOSFET |
N | 1 | 60 | - | - | - | - | 7500 | 0.5 | 0.36 |
SOT-23-3 |
| TN2130 | N-Channel Enhancement-Mode Vertical DMOS FET | - | Supertex, Inc. |
MOSFET |
N | 1 | 300 | - | - | - | 25000 | - | 0.25 | 0.36 |
SOT-23-3 |
| TN2124 | N-Channel Enhancement-Mode Vertical DMOS FET |
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Supertex, Inc. |
MOSFET |
N | 1 | 240 | - | - | - | 15000 | - | 0.14 | 0.36 |
SOT-23-3 |
| TN2106K1-G | N-Channel Enhancement-Mode Vertical DMOS FET |
|
Supertex, Inc. |
MOSFET |
N | 1 | 60 | - | - | - | 5000 | 2500 | 0.28 | 0.36 |
SOT-23-3 |
| ZXM41N10F | SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET |
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Zetex |
MOSFET |
N | 1 | 100 | - | - | - | 8000 | - | 0.17 | 0.36 |
SOT-23-3 |
| BSS123A | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
|
Diodes Incorporated |
MOSFET |
N | 1 | 100 | - | - | - | 10000 | 6000 | 0.17 | 0.36 |
SOT-23-3 |
