Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRFR9310PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 400 | - | - | - | - | 7000 | 1.8 | 50 |
D-PAK |
| IXTP2N100 | Стандартный N-канальный силовой MOSFET |
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IXYS |
MOSFET |
N | 1 | 1000 | 7000 | 7000 | 7000 | 7000 | 7000 | 2 | 100 |
TO-220 |
| IRFR9310 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 400 | - | - | - | - | 7000 | 1.8 | 50 |
D-PAK |
| IXTA2N100 | Стандартный N-канальный силовой MOSFET |
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IXYS |
MOSFET |
N | 1 | 1000 | 7000 | 7000 | 7000 | 7000 | 7000 | 2 | 100 |
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| FQU1N50 | 500V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 6800 | 1.1 | 25 |
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| FQD1N50 | 500V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 6800 | 1.1 | 25 |
D-PAK |
| IRFIBE20GPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 800 | - | - | - | - | 6500 | 1.4 | 30 |
TO-220F |
| IRFIBE20G | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 800 | - | - | - | - | 6500 | 1.4 | 30 |
TO-220F |
| TSM2N70CZ | Силовой N-канальный MOSFET транзистор, 700 В, 2 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 700 | - | - | - | - | 6500 | 2 | 45 |
TO-220 |
| IXTY1R6N50P | Стандартный N-канальный силовой MOSFET |
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IXYS |
MOSFET |
N | 1 | 500 | 6500 | 6500 | 6500 | 6500 | 6500 | 1.6 | 43 |
TO-252 |
| TSM2N70CP | Силовой N-канальный MOSFET транзистор, 700 В, 2 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 700 | - | - | - | - | 6500 | 2 | 45 |
TO-252 |
| TSM2N70CH | Силовой N-канальный MOSFET транзистор, 700 В, 2 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 700 | - | - | - | - | 6500 | 2 | 45 |
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| IRFBE20PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 800 | - | - | - | - | 6500 | 1.8 | 54 |
TO-220AB |
| IRFBE20 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 800 | - | - | - | - | 6500 | 1.8 | 54 |
TO-220AB |
| STP2NK100Z | N-channel 1000 V, 6.25 ?, 1.85 A, TO-220 Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 1000 | - | - | - | - | 6250 | 1.85 | 70 |
TO-220 |
| STD2NK100Z | N-channel 1000 V, 6.25 ?, 1.85 A, DPAK Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 1000 | - | - | - | - | 6250 | 1.85 | 70 |
D-PAK |
| STU2NK100Z | N-channel 1000 V, 6.25 ?, 1.85 A, IPAK Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 1000 | - | - | - | - | 6250 | 1.85 | 70 |
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| STP2NK100Z | N-channel 1000 V, 6.25 ?, 1.85 A,TO-220 Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 1000 | - | - | - | - | 6250 | 1.85 | 70 |
TO-220 |
| STU2NK100Z | N-channel 1000 V, 6.25 ?, 1.85 A, IPAK Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 1000 | - | - | - | - | 6250 | 1.85 | 70 |
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| STD2NK100Z | N-channel 1000 V, 6.25 ?, 1.85 A, DPAK Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 1000 | - | - | - | - | 6250 | 1.85 | 70 |
D-PAK |
