Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRF9530PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 300 | 12 | 88 |
TO-220AB |
| Si5441BDC | P-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 65 | 36 | - | 4.4 | 1.3 |
ChipFET_1206-8 |
| CSD75205W1015 | Сдвоенный P-канальный силовой MOSFET NexFET™ с общим истоком |
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Texas Instruments |
MOSFET |
P | 2 | -20 | 145 | - | - | 95 | - | -1.2 | 0.75 |
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| IRF7704 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 40 | - | - | - | 74 | 46 | 4.6 | 1.5 |
TSSOP-8 |
| DMP2004K | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | 1700 | - | - | 700 | - | -6.6 | 0.55 |
SOT-23-3 |
| IRFI9620G | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 1500 | 3 | 30 |
TO-220F |
| Si1417EDH | P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | 133 | - | 95 | 70 | - | 2.7 | 1 |
SC70-6 |
| IRF7751GPBF | HEXFET Power MOSFETs Dual P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 2 | 30 | - | - | - | 55 | 35 | 4.5 | 1 |
TSSOP-8 |
| ZVP3306A | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
P | 1 | -60 | - | - | - | - | 14000 | -0.16 | 0.625 |
TO-92 |
| Si6981DQ | Dual P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 46 | - | 34 | 26 | - | 4.1 | 0.83 |
TSSOP-8 |
| IXTR90P10P | Силовой P-канальный MOSFET-транзистор |
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IXYS |
MOSFET |
P | 1 | -100 | 27 | 27 | 27 | 27 | 27 | -57 | 190 |
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| BSS84LT1 | Power MOSFET 130 mA, 50 V P?Channel SOT?23 |
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ON Semiconductor |
MOSFET |
P | 1 | 50 | - | - | - | - | - | 0.13 | 0.225 |
SOT-23-3 |
| Si1411DH | P-Channel 150-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 150 | - | - | - | - | 2050 | 42 | 1 |
SC70-6 |
| IRF7410 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 12 | - | - | - | 7 | - | 16 | 2.5 |
SOIC-8 |
| NTHD4102P | Power MOSFET ?20 V, ?4.1 A, Dual P?Channel ChipFET |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | 120 | - | - | 64 | - | -2.9 | 1.1 |
ChipFET_1206-8 |
| IRF9630PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 800 | 6.5 | 74 |
TO-220AB |
| Si7601DN | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 25 | 16 | - | 16 | 52 |
PowerPAK_1212-8 |
| NTMD6P02R2 | Power MOSFET 6 Amps, 20 Volts P?Channel SOIC?8, Dual |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | - | - | - | 27 | - | -7.8 | 2 |
SOIC-8 |
| DMP3015LSS | SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 14 | 9 | -13 | 2.5 |
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| IRFR9020 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 50 | - | - | - | - | 280 | 9.9 | 42 |
D-PAK |
