Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
DMN2114SN | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 20 | - | - | - | 100 | - | 1.2 | 0.5 |
|
|
FDS6894A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | 21 | - | - | 13 | - | 8 | 1.6 |
SOIC-8 |
|
Si5499DC | P-Channel 1.5V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 8 | 46 | - | 37 | 30 | - | 6 | 6.2 |
ChipFET_1206-8 |
|
Si9926BDY | Dual N-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
N | 2 | 20 | - | - | 24 | 16 | - | 6.2 | 1.14 |
SOIC-8 |
|
Si2315BDS | P-Channel, 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 12 | 71 | - | 50 | 40 | - | 3 | 0.75 |
SOT-23-3 |
|
TSM301K12CQ | P-канальный MOSFET транзистор, -20 В, -4.5 А со встроенным диодом Шоттки | Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | 185 | 131 | - | 94 | - | -4.5 | 6.5 |
|
|
PMN50XP | P-channel TrenchMOS extremely low level FET | NXP |
MOSFET |
P | 1 | 20 | - | - | - | 48 | - | 4.8 | 2.2 |
SOT-23-6 |
|
IRF7701GPBF | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 12 | - | - | - | 11 | - | 10 | 1.5 |
TSSOP-8 |
|
IRL3502 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | - | 8 | - | 110 | 140 |
TO-220AB |
|
FQP5N50C | 500V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | 1140 | - | 5 | 73 |
TO-220 |
|
IRLR3802 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 12 | - | - | 30 | 8.5 | - | 84 | 88 |
D-PAK |
|
BSS84V | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 2 | -50 | - | - | - | - | - | -0.13 | 0.15 |
|
|
SiA513DJ | N- and P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
N+P | 2 | 12 | - | - | 152 | 91 | - | 4.5 | 6.5 |
PowerPAK SC70-6 |
|
Si6943BDQ | Dual P-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
P | 2 | 12 | - | - | 8 | 6 | - | 2.3 | 0.8 |
TSSOP-8 |
|
TSM6981DCA | Сдвоенный P-канальный MOSFET транзистор, -20 В, -5 А | Taiwan Semiconductor |
MOSFET |
P | 2 | -20 | 60 | 50 | - | 40 | - | -5 | 1.14 |
TSSOP-8 |
|
FDV305N | 20V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 20 | - | - | - | 164 | - | 0.9 | 0.35 |
SOT-23-3 |
|
IRF7901D1 | HEXFET Power MOSFETs Dual N-Channel | International Rectifier (IRF) |
MOSFET |
N | 2 | 30 | - | - | - | 32 | - | 6.2 | 2 |
SOIC-8 |
|
SiA850DJ | N-Channel 190-V (D-S) MOSFET with 190-V Diode | Vishay |
MOSFET |
N | 1 | 190 | 3500 | - | 3200 | 3000 | - | 0.95 | 7 |
PowerPAK SC70-6 |
|
DMP2305U | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -20 | 87 | - | - | 45 | - | -4.2 | 1.4 |
SOT-23-3 |
|
Si4500BDY | Complementary MOSFET Half-Bridge (N- and P-Channel) | Vishay |
MOSFET N+P |
N+P | 2 | 20 | - | - | 24 | 16 | - | 3.8 | 1.3 |
SOIC-8 |